Mid-infrared Absorption of Femtosecond Laser Microstructured Silicon Formed in Different Gas Ambient

Sun Haibin,Sun Shengli,Chen Fuchu,Zhao li,Wang Guifu

DOI: https://doi.org/10.1364/cleo_at.2020.jw2b.14

2020-01-01

Abstract:We researched the mid-infrared absorption changes of micro-structured silicon prepared in SF6, N2, and NF3, the different changes mainly due to the concentrations of impurities doped in surface layer.

What problem does this paper attempt to address?

Crystallinity and Sub-Band Gap Absorption of Femtosecond-Laser Hyperdoped Silicon Formed in Different N-Containing Gas Mixtures

Haibin Sun,Jiamin Xiao,Suwan Zhu,Yue Hu,Guojin Feng,Jun Zhuang,Li Zhao

DOI: https://doi.org/10.3390/ma10040351

IF: 3.4

2017-01-01

Materials

Abstract:Femtosecond (fs)-laser hyperdoped silicon has aroused great interest for applications in infrared photodetectors due to its special properties. Crystallinity and optical absorption influenced by co-hyperdoped nitrogen in surface microstructured silicon, prepared by fs-laser irradiation in gas mixture of SF₆/NF₃ and SF₆/N₂ were investigated. In both gas mixtures, nitrogen and sulfur were incorporated at average concentrations above 1019 atoms/cm³ in the 20-400 nm surface layer. Different crystallinity and optical absorption properties were observed for samples microstructured in the two gas mixtures. For samples prepared in SF₆/N₂, crystallinity and light absorption properties were similar to samples formed in SF₆. Significant differences were observed amongst samples formed in SF₆/NF₃, which possess higher crystallinity and strong sub-band gap absorption. The differing crystallinity and light absorption rates between the two types of nitrogen co-hyperdoped silicon were attributed to different nitrogen configurations in the doped layer. This was induced by fs-laser irradiating silicon in the two N-containing gas mixtures.
Strong Mid-Infrared Absorption and High Crystallinity of Microstructured Silicon Formed by Femtosecond Laser Irradiation in NF3 Atmosphere

xiao dong,ning li,cong liang,haibin sun,guojin feng,zhen zhu,hezhu shao,ximing rong,li zhao,jun zhuang

DOI: https://doi.org/10.7567/APEX.6.081301

IF: 2.819

2013-01-01

Applied Physics Express

Abstract:Arrays of high-quality crystalline conical spikes were formed on silicon surface in the presence of NF3 with femtosecond laser irradiation. The surface of the structures is smooth, and Raman scattering spectroscopy shows that few silicon polymorphs such as a-Si, Si-XII, and Si-III were observed in the conical structures. In the mid-infrared wavelength range of 3-16 mu m, the structured surface exhibits a high absorptance up to 0.8. Additionally, the absorptance of the sample remains almost unchanged after the annealing process. These properties of the structured silicon will make it a promising material for mid-infrared applications in optoelectronic fields. (C) 2013 The Japan Society of Applied Physics
Surface Morphology and Infrared Absorption of Silicon Irradiated by Picosecond Laser Pulses in Sf6

Dewei Liu,Yongguang Huang,Xiaoning Zhu,Xiyuan Wang,Haijuan Yu,Xuechun Lin,Minghua Chen,Hongliang Zhu

DOI: https://doi.org/10.4028/www.scientific.net/amr.418-420.77

2012-01-01

Abstract:The microstructured samples were prepared by irradiating silicon surface with picosecond laser pulses in SF6. The surface morphology of microstructured samples irradiated at different laser fluence was characterized by SEM. The samples exhibited high optical absorptance over a wide wavelength range between 300 and 2700 nm. The absorptance of samples irradiated with the fluence of 1.0 J/cm(2) was measured to be up to 95% between 1100 and 2700 nm. The infared absorptance of the surface-structured samples increased with increasing fluence. Whereas, as the annealing temperature was increased, the infared absorptance of the samples irradiated at the same fluence decreased. A tentative explanation for the effects of laser fluence and annealing temperature on the infared absorptance has been proposed based on the formation of mid-band gap impurity bands and the multiple reflections of light between microstructures.
Broad band enhanced infrared light absorption of a femtosecond laser microstructured silicon

Y. Liu,S. Liu,Y. Wang,G. Feng,J. Zhu,L. Zhao

DOI: https://doi.org/10.1134/S1054660X08100071

IF: 1.2

2008-01-01

Laser Physics

Abstract:Absorptive properties of surface-structured silicon prepared by femtosecond laser pulses irradiating in SF 6 or N 2 are measured in a wide wavelength range of 0.3–16.0 μm. The SF 6 -prepared surface-structured silicon shows enhanced light absorptance up to 80% or more in the entire measured wavelength range. The absorptance for N 2 _prepared surface-structured silicon in the wavelength range of 9–14 µm is similar to that of a SF 6 -prepared sample, although it decreases to about 30% in the wavelength range of 2–7 µm. Light absorption varies with the height and density of the spikes formed on silicon surfaces.
Infrared Light Absorption and Emissivity of Silicon Microstructured by Femtosecond Laser in SF6

Yuan Li,Guojin Feng,Li Zhao

DOI: https://doi.org/10.4028/www.scientific.net/amr.287-290.364

2011-01-01

Advanced Materials Research

Abstract:The surface microstructured silicon prepared by femtosecond laser pulses irradiation in SF6 shows significantly enhanced light absorption over a wide wavelength range. Absorptance of microstructured silicon is measured from 2 to 16μm, and the absorptance can up to 0.8 in the measured wavelength range. The absorptance of microstructured silicon increases as the height of spikes increases. Emissivity of microstructured silicon at different temperatures(100°C-400°C) is measured from 2.5μm to 25μm. Greatly enhanced emissivity compared to that of flat silicon was observed. At a certain temperature, with increasing the height of the spikes, the emissivity increases. For a sample with 13–14μm high spikes, the emissivity at a temperature of 100°C is approximately 0.96. A tentative explanation for the high absorptance of microstructured silicon has been carried out from three aspects: impurity states, structure defects and multiple reflection of light between spikes. The excellent properties of microstructured silicon make it a promising candidate for applications of infrared detectors, silicon solar cells, flat blackbody source and so on.
Selected Two-Dimensional Effects in Gas Immersion Laser Doping of Unpatterned Silicon

K. Sadra,Hai‐Feng Ji

DOI: https://doi.org/10.1116/1.589764

1998-01-01

Abstract:We have performed a theoretical investigation of two-dimensional effects in melting and arsenic gas immersion laser doping of unpatterned silicon under patterned excimer-laser exposure. For pattern sizes below a few microns, the melt depths depend on the pattern size, rendering processing of narrow and wide features with the same laser fluence difficult. For wide exposed areas, molten regions are significantly narrower than the exposed widths, particularly for lower fluences. For deep submicron unexposed spaces, the melt may encroach into unexposed areas, potentially melting through them for higher fluences. Raising concerns regarding the processing of unpatterned wafers, these results indicate that structures on patterned wafers should be exploited to control thermal diffusion effects.
Separation of Mid-IR Light Trapping and Sulfur-Donor Absorption in Nanosecond-Laser Sulfur-Hyperdoped Silicon: a Way to Spatially- and Spectrally-Engineered Interband IR-Absorption

Luong Van Nguyen,S. I. Kudryashov,A. A. Rudenko,R. A. Khmel’nitskii,A. A. Ionin

DOI: https://doi.org/10.1007/s10946-018-9707-3

IF: 0.81

2018-03-01

Journal of Russian Laser Research

Abstract:We perform IR nanosecond laser microtexturing and hyperdoping of commercial silicon wafers under a 5 mm thick carbon-disulfide liquid layer at broadly variable laser exposures from incomplete to multi-shot irradiation per spot. All these samples demonstrate that the mid-IR-range optical densities and sulfur-donor dopant vary concentrations nonmonotonously versus laser intensity and scanning speed due to surface ablation and its vapor bubble screening. This enabled us, for the first time, to distinguish the predominating MIR-light trapping in microstructured Si at high exposures and a characteristic sulfur-donor MIR-absorption at lower exposures at rather constant sulfur concentrations. The characteristic interband sulfur-donor IR-absorption exhibits increasing magnitude for larger dissolved sulfur clusters versus increase in total sulfur concentration, paving the way for spatially- and spectrally-engineered MIR-absorption in hyperdoped Si for thin-film photovoltaics.

optics
Laser Induced Plasma in the Formation of Surface-Microstructured Silicon

Shuying Liu,Jingtao Zhu,Yang Liu,Li Zhao

DOI: https://doi.org/10.1016/j.matlet.2008.05.012

IF: 3

2008-01-01

Materials Letters

Abstract:The plasma induced by femtosecond laser pulses irradiated on silicon surface has been investigated by optical emission spectroscopy. The plasma emission spectra show strong dependence on the structuring ambient gas species and pressure. Among the four ambient gases (SF6, N-2, air and vacuum), the plasma obtained in sulfur hexafluoride (SF6) shows the strongest signals. The emission intensities increase initially with the gas pressure. and achieve strongest at the pressure of about 70 kPa, then decrease as the pressure further increases. The stronger plasma emission signals indicate stronger reactions, resulting in sharper sample morphology, which provides an insight into the reaction process, (C) 2008 Elsevier B.V. All rights reserved.
Great enhancement of infrared light absorption of silicon surface-structured by femtosecond laser pulses in N2 ambient

Jingtao Zhu,Li Zhao,Wen Li,Yu Wang,Guojin Feng,Zhanshan Wang

DOI: https://doi.org/10.1016/j.matlet.2005.12.095

IF: 3

2006-01-01

Materials Letters

Abstract:The enhanced light absorption of surface-microstructured silicon, prepared by cumulative irradiating with femtosecond laser pulses in ambient gas of N2, was presented in this letter. The blunt conical spikes formed on silicon surface after irradiation are of elliptic conical shape due to the linearly polarized laser irradiation. Greatly enhanced light absorption of such surface-structured silicon was observed in the whole measured wavelength range from 0.3 to 16.7 μm. The light absorptance is up to 95% over the wavelength range of 0.3∼1.1 μm and as high as 75% or more in wavelength range of 8.8∼13.3 μm, though it is down to about 30% in the wavelength range of 2∼7 μm.
Mid-long wavelength infrared absorptance of hyperdoped silicon via femtosecond laser microstructuring

Haibin Sun,Xiaolong Liu,Li Zhao,Jianxin Jia,Changhui Jiang,Jiamin Xiao,Yuwei Chen,Long Xu,Zhiyong Duan,Peng Rao,Shengli Sun

DOI: https://doi.org/10.1364/OE.446283

IF: 3.8

2022-01-01

Optics Express

Abstract:Hyperdoped silicon (hSi) fabricated via femtosecond laser irradiation has emerged as a promising photoelectric material with strong broadband infrared (IR) absorption. In this work, we measured the optical absorptance of the hSi in the wavelength of 0.3-16.7 mu m. Unlike the near to mid wavelength IR absorption, the mid-long wavelength IR (M-LWIR) absorption is heavily dependent on the surface morphology and the dopants. Furthermore, calculations based on coherent potential approximation (CPA) reveal the origin of free carrier absorption, which plays an important role in the M-LWIR absorption. As a result, a more comprehensive picture of the IR absorption mechanism is drawn for the optoelectronic applications of the hSi. (C) 2022 Optica Publishing Group under the terms of the Optica Open Access Publishing Agreement
Comparison of structure and properties of femtosecond and nanosecond laser-structured silicon

C. H. Crouch,J. E. Carey,J. M. Warrender,M. J. Aziz,E. Mazur,F. Y. Génin

DOI: https://doi.org/10.1063/1.1667004

IF: 4

2004-03-15

Applied Physics Letters

Abstract:We compare the optical properties, chemical composition, and crystallinity of silicon microstructures formed in the presence of SF6 by femtosecond laser irradiation and by nanosecond laser irradiation. In spite of very different morphology and crystallinity, the optical properties and chemical composition of the two types of microstructures are very similar. The structures formed with femtosecond (fs) pulses are covered with a disordered nanocrystalline surface layer less than 1 μm thick, while those formed with nanosecond (ns) pulses have very little disorder. Both ns-laser-formed and fs-laser-formed structures absorb near-infrared (1.1–2.5 μm) radiation strongly and have roughly 0.5% sulfur impurities.

physics, applied
Infrared Light Absorption of Silver Film Coated on the Surface of Femtosecond Laser Microstructured Silicon in Sf6

Yulan Wang,Shuying Liu,Yu Wang,Guojin Feng,Jingtao Zhu,Li Zhao

DOI: https://doi.org/10.1016/j.matlet.2009.09.052

IF: 3

2009-01-01

Materials Letters

Abstract:Absorptive properties of 100nm thick silver (Ag) films coated on the surface of microstructured silicon prepared by femtosecond laser pulses irradiation in SF6 were measured in a wavelength range of 1.33–16.7µm. Greatly enhanced light absorption of Ag films was observed in the entire measured wavelength range. For sample with 6–8µm spikes, the absorptance is approximately 0.9 and essentially unchanged in the wavelength region of 1.33–10µm, and decreases slightly when λ>10µm, but keeps higher than 0.75 over the whole measured wavelength range. The infrared absorption is strongly related to the height and density of the spikes. While for the samples without Ag coating, the absorption is much lower than that of the Ag films. Multiple reflection of light between spikes and surface plasmon excitation of nano-particles on the spikes surface may lead to the strongly enhanced infrared absorption in such a wide wavelength range.
Silicon micro-structuring using ultra-short laser pulses

Jingtao Zhu,Wen Li,Minghui Zhao,Gang Yin,Xiao Chen,Deying Chen,Li Zhao

DOI: https://doi.org/10.1117/12.571965

2005-01-01

Abstract:Microstructures develop spontaneously on silicon surface under the cumulative short laser pulses irradiation in different ambient atmospheres. The experimental results suggest that the ambient atmospheres and the laser pulse duration play key roles on the microstructures formation. Only in SF6 ambient, the sharp conical spikes develop. Under the picosecond laser irradiation, silicon surface is melted before the spike arrays formed, while under the femtosecond laser irradiation, the formation of spike array does not pass through the liquid phase. The optical absorption increases remarkably from ultraviolet (similar to 0.25 mu m) to the infrared (similar to 19 mu m) for the microstructured silicon material, which promises for new device applications, such as solar cells, infrared photo-detector.
First-principles research on mechanism of sub-band absorption of amorphous silicon induced by ultrafast laser irradiation

Yu-Chen Gao,Ji-Hong Zhao,Xue-Peng Wang,Nian-Ke Chen

DOI: https://doi.org/10.1016/j.rinp.2021.104941

IF: 4.565

2021-12-01

Results in Physics

Abstract:Black silicon fabricated by ultrafast laser is a promising material for infrared detection. However, the structure–property relationship in laser-fabricated amorphous Si is still unclear. By first-principles calculations, different distorted local structures are revealed depending on cooling rate. By comparing the evolutions of structure and property, the bond angle distribution is identified as a good structural descriptor for sub-band absorptions. Glass formation is not simply a freezing of liquid but involves certain structural transitions that happened between 1350 and 850 K. A glass-forming temperature of 1100 K is further revealed which agrees with experiments. The main thermal-management effect is the duration time of glass-forming process. A shorter-pulse laser leads to more distorted structures and thus more defect states and infrared absorptions.

physics, multidisciplinary,materials science
Combined Continuum-Atomistic Modeling of Ultrashort-Pulsed Laser Irradiation of Silicon

Yong Gan,J. K. Chen

DOI: https://doi.org/10.1007/s00339-011-6573-z

2011-01-01

Applied Physics A

Abstract:Ultrafast thermomechanical responses of silicon thin films due to ultrashort-pulsed laser irradiation were investigated using an atomic-level hybrid method coupling the molecular dynamics and the ultrafast two-step energy transport model. The dynamic reflectivity and absorption were considered, and the effects of laser fluence and pulse duration on the thermomechanical response were studied. It was found that both the carrier temperature and number density rapidly increase to their maximum while the lattice temperature rises at a much slower rate. The ultrafast laser heating could induce a strong stress wave in the film, with the maximum compressive and tensile stress occurring near the front and back surfaces, respectively. For laser pulses of the same duration, the higher the laser fluence is, the higher the carrier temperature and density and lattice temperature are induced. For the same laser fluence, a longer pulse generally produces lower carrier density and temperatures and weaker stress shock strength. However, for the fluence of 0.2 J/cm(2), the lowest lattice temperature was simulated for a 100-fs pulse compared to the 1-ps and 5-ps pulses, due to the increase of reflectivity by high carrier density. It is also shown that the optical properties as functions of lattice temperature usually employed are not suited for modeling ultrafast laser interactions with silicon materials.
Fabrication of Black Silicon with Thermostable Infrared Absorption by Femtosecond Laser

Chun-Hao Li,Ji-Hong Zhao,Xin-Yue Yu,Qi-Dai Chen,Jing Feng,Hong-Bo Sun

DOI: https://doi.org/10.1109/jphot.2016.2617403

IF: 2.4

2016-01-01

IEEE Photonics Journal

Abstract:Annealing-insensitive black silicon with high absorption below the silicon bandgap has been achieved by femtosecond laser direct writing. Spike microstructures with sizes ranging from 4 to 25 μm are formed on the surface layer of silicon substrate, and a large amount of phosphorous impurities (1021 cm-3) is doped during the resolidification process. The infrared absorption of phosphorus-doped black silicon decreases slightly with both the annealing temperature and duration. Excitingly, the largest decrease is less than 10% at 2 μm (annealing 240 min at 873K). This thermostable infrared absorption is related to free carrier absorption. After laser irradiation, the phosphorus-doped layer maintains a relatively high crystallinity that can be improved further during thermal annealing. The density of the electrically activated impurities is approximately 1019 cm-3.
Femtosecond laser fabrication of silicon surface microstructures for enhanced infrared radiation under electric drive

Jie Wu,Yulei Huang,Tao Shang,Fangjie Wang,Guoliang Deng,Xiaolin Sui,Shouhuan Zhou

DOI: https://doi.org/10.2139/ssrn.4532539

IF: 3.754

2023-10-09

Optical Materials

Abstract:Silicon surface microstructures can significantly improve their reflection and absorption characteristics and are widely used in photovoltaics and optoelectronic detection. But there is little research on the infrared emission characteristics of microstructure silicon since silicon is an indirect bandgap material. Here, we fabricate surface microstructures on highly doped silicon by femtosecond laser scanning, enhancing its broadband infrared radiation significantly under electric driving. At 12 μm, it can be enhanced to 274% of the untreated silicon. Our results show that silicon with surface microstructures can be used as a wideband infrared emitter. This study provides a new method for realizing a broad-spectrum silicon-based electrical drive infrared light source.

materials science, multidisciplinary,optics
Greatly enhanced infrared normal spectral emissivity of microstructured silicon using a femtosecond laser

Guojin Feng,Yu Wang,Yuan Li,Jingtao Zhu,Li Zhao

DOI: https://doi.org/10.1016/j.matlet.2011.01.067

IF: 3

2011-01-01

Materials Letters

Abstract:The infrared normal spectral emissivity of microstructured silicon prepared by femtosecond laser irradiation in SF6 was measured for the wavelength range 2.5μm to 25μm. Greatly enhanced emissivity compared to that of flat silicon was observed over the entire wavelength range. For a sample with 13–14μm high spikes, the emissivity at a temperature of 100°C is approximately 0.96. The emissivity decreases slightly in the wavelength region above 8μm, but remains higher than 0.9 over most of the measured wavelength range. Also the average emissivity is less than Nextel- Velvet-811-21 Coating, it can be used stably at more wide temperatures from 100°C to 400°C. These results show the potential for microstructured silicon to be used as a flat blackbody source or silicon-based pyroelectric and microbolometer devices.
Infrared Absorption of Nitrogen–oxygen Complex in Silicon

DR Yang,XY Ma,RX Fan,DS Li,JX Zhang,LB Li,DL Que,K Sumino

DOI: https://doi.org/10.1016/s0921-5107(99)00502-4

2000-01-01

Abstract:The infrared optical absorption of nitrogen–oxygen complex in Czochralski (CZ) silicon measured by a Fourier Transmission Infrared Spectroscope (FTIR) has been studied. The CZ silicon samples grown in N–O complex were annealed in the temperature range of 450–1150°C for 10, 20 and 30 min. It was found that the variation of the optical lines measured in the middle infrared range and that in the far infrared range had the same tendency during annealing. The relations of the absorption lines in the middle and far infrared range were built. It is considered that the absorption lines in both infrared ranges come from same defects in silicon.
Near-Unity Below-Band-Gap Absorption by Microstructured Silicon

C Wu,CH Crouch,L Zhao,JE Carey,R Younkin,JA Levinson,E Mazur,RM Farrell,P Gothoskar,A Karger

DOI: https://doi.org/10.1063/1.1358846

IF: 4

2001-01-01

Applied Physics Letters

Abstract:We increased the absorptance of light by silicon to approximately 90% from the near ultraviolet (0.25 μm) to the near infrared (2.5 μm) by surface microstructuring using laser-chemical etching. The remarkable absorptance most likely comes from a high density of impurities and structural defects in the silicon lattice, enhanced by surface texturing. Microstructured avalanche photodiodes show significant enhancement of below-band-gap photocurrent generation at 1.06 and 1.31 μm, indicating promise for use in infrared photodetectors.

Mid-infrared Absorption of Femtosecond Laser Microstructured Silicon Formed in Different Gas Ambient

Crystallinity and Sub-Band Gap Absorption of Femtosecond-Laser Hyperdoped Silicon Formed in Different N-Containing Gas Mixtures

Strong Mid-Infrared Absorption and High Crystallinity of Microstructured Silicon Formed by Femtosecond Laser Irradiation in NF3 Atmosphere

Surface Morphology and Infrared Absorption of Silicon Irradiated by Picosecond Laser Pulses in Sf6

Broad band enhanced infrared light absorption of a femtosecond laser microstructured silicon

Infrared Light Absorption and Emissivity of Silicon Microstructured by Femtosecond Laser in SF6

Selected Two-Dimensional Effects in Gas Immersion Laser Doping of Unpatterned Silicon

Separation of Mid-IR Light Trapping and Sulfur-Donor Absorption in Nanosecond-Laser Sulfur-Hyperdoped Silicon: a Way to Spatially- and Spectrally-Engineered Interband IR-Absorption

Laser Induced Plasma in the Formation of Surface-Microstructured Silicon

Great enhancement of infrared light absorption of silicon surface-structured by femtosecond laser pulses in N2 ambient

Mid-long wavelength infrared absorptance of hyperdoped silicon via femtosecond laser microstructuring

Comparison of structure and properties of femtosecond and nanosecond laser-structured silicon

Infrared Light Absorption of Silver Film Coated on the Surface of Femtosecond Laser Microstructured Silicon in Sf6

Silicon micro-structuring using ultra-short laser pulses

First-principles research on mechanism of sub-band absorption of amorphous silicon induced by ultrafast laser irradiation

Combined Continuum-Atomistic Modeling of Ultrashort-Pulsed Laser Irradiation of Silicon

Fabrication of Black Silicon with Thermostable Infrared Absorption by Femtosecond Laser

Femtosecond laser fabrication of silicon surface microstructures for enhanced infrared radiation under electric drive

Greatly enhanced infrared normal spectral emissivity of microstructured silicon using a femtosecond laser

Infrared Absorption of Nitrogen–oxygen Complex in Silicon

Near-Unity Below-Band-Gap Absorption by Microstructured Silicon