Abstract:As a pillar material of semiconductors, single-crystal silicon (Si) has attracted much attention due to its excellent electronic properties. Meanwhile, femtosecond laser processing as a convenient fabrication method for miniaturized structures provides an effective way to improve the performance of Si-based devices. However, the final-state analysis of femtosecond laser-induced Si micro-nano structures remains to be explored. In this study, the evolution of the micro-nano structures and the variation of surface and subsurface damage with pulse number were studied. Based on the atomic structure, the amorphous layer, dislocation layer, and unaffected layer were found. The amorphous layer resulted from the re-solidification of melted materials. The dislocation layer consisted of dislocations and lattice distortion. The unaffected layer retained the initial lattice structure and was not affected by laser irradiation. The high temperature and stress induced by multiple pulses led to the stacking faults and nano-twins in the subsurface layer. The evolution of the Si structure was essentially a transition process from a dislocation layer to a high-density defect layer and a transition process from nanotips to laser-induced periodic surface structures. During this process, dislocations dominated the femtosecond laser-induced microstructural deformation, affecting the nano-hardness of the irradiated surface. As a result, the nano-hardness of Si structures fabricated using femtosecond laser processing was maximally enhanced by 9.54%. This work provides new information about ultrafast laser-induced surface and subsurface damage, which is significant for the efficient and high-precision fabrication of Si-based functional micro-nano devices.

Comparison of structure and properties of femtosecond and nanosecond laser-structured silicon

Effect of high-power nanosecond and femtosecond laser pulses on silicon nanostructures

Crystallinity and Sub-Band Gap Absorption of Femtosecond-Laser Hyperdoped Silicon Formed in Different N-Containing Gas Mixtures

One-Step femtosecond laser irradiation of Single-Crystal Silicon: Evolution of Micro-Nano structures and damage investigation

Combined Continuum-Atomistic Modeling of Ultrashort-Pulsed Laser Irradiation of Silicon

Comparison of structures and hydrophobicity of femtosecond and nanosecond laser-etched surfaces on silicon

Surface Morphology and Infrared Absorption of Silicon Irradiated by Picosecond Laser Pulses in Sf6

Broad band enhanced infrared light absorption of a femtosecond laser microstructured silicon

Effect of Crystallographic Orientation on Structural Response of Silicon to Femtosecond Laser Irradiation

Modifying single-crystal silicon and trimming silicon microring devices by femtosecond laser irradiation

Comparison study of the femtosecond laser-induced surface structures on silicon at an elevated temperature.

Evolution of Microstructures on Silicon Induced by Femtosecond Laser with Multiple Pulses

Evolution of Silicon Surface Microstructures by Picosecond and Femtosecond Laser Irradiations

Direct observation and quantification of nanosecond laser induced amorphization inside silicon

Resonant Optical Properties of Crystalline Silicon Nanoparticles Fabricated by Laser Ablation-Based Methods

Strong Mid-Infrared Absorption and High Crystallinity of Microstructured Silicon Formed by Femtosecond Laser Irradiation in NF3 Atmosphere

Atomic-Level Modeling of A Silicon Nanofilm Irradiated by Ultrashort-Pulsed Laser Bursts

Infrared Light Absorption and Emissivity of Silicon Microstructured by Femtosecond Laser in SF6

Effects of Parameters in Femtosecond Laser Micromachining on Ablation of Silicon

Laser microstructuring of Si surfaces for low-threshold field-electron emission

Crystallinity in periodic nanostructure surface on Si substrates induced by near- and mid-infrared femtosecond laser irradiation