Abstract:Transition metal dichalcogenides (TMDs) represent an important family of two-dimensional materials with diverse crystal structures and physical properties, offering a broad platform for scientific research and device applications. The diversity of TMDs' properties arises not only from their relatively large family but also from the variety of their crystal structure phases. The most common structures of TMDs are the trigonal prismatic phase (H phase) and the octahedral phase (T phase). Studies have shown that, in addition to these two high-symmetry phases, TMDs also have other distorted phases. Distorted phases often exhibit different physical properties from symmetric phases and can perform better in certain systems. Given the structural differences between different distorted phases can sometimes be very small, it is experimentally challenging to observe the coexistence of multiple distorted phases. Therefore, it is meaningful to theoretically explore the structural stability and physical properties of different distorted phases. In this study, we investigate the structure and phase transition of monolayer RuSe2 through first-principles calculation. While confirming its ground state as the dimerized phase (T$^\prime$ phase), we identify the existence of another energetically competitive trimerized phase (T$^{\prime\prime\prime}$ phase). By comparing the energies of four different structures and combining the results of phonon spectra and molecular dynamics simulations, we predicted the stability of the T$^{\prime\prime\prime}$ phase at room temperature. Given that the H and T phases of two-dimensional RuSe2 have already been observed experimentally, and considering that the energy of the T$^{\prime\prime\prime}$ phase is much lower than that of the H and T phases, it is highly likely that the T$^{\prime\prime\prime}$ phase exists in experiment. Combined with calculations of the phase transition barrier and molecular dynamics simulations, we anticipate that applying slight stress to the T$^\prime$ phase structure at room temperature can induce a lattice transition from T$^\prime$ to T$^{\prime\prime\prime}$ phase. This phase transition results in significant changes in the band structure and carrier mobility, with the bandgap changing from an indirect bandgap of 1.11 eV to a direct bandgap of 0.71 eV, and the carrier mobility in the armchair direction increasing from $0.82 \times 10^3 \, \text{cm}^2\text{V}^{-1}\text{s}^{-1}$ to $3.22 \times 10^3 \, \text{cm}^2\text{V}^{-1}\text{s}^{-1}$, an approximately threefold enhancement. Our work contrasts and investigates two possible coexisting distorted phases in monolayer RuSe2, analyzing their electronic structures and carrier mobilities, thereby facilitating experimental investigations of two-dimensional RuSe2 materials and their applications in future electronic devices.

Carrier Sign Reversal in Amorphous Silicon Ruthenium Thin Films Deposited by Co-Sputtering

Structural Variation and Electrical Properties of Amorphous Silicon Ruthenium Thin Films Embedded with Nanocrystals

Raman Analysis of Amorphous Silicon Ruthenium Thin Films Embedded with Nanocrystals

New Paramagnetic Centre And High Conductivity In A-Si1-Xrux : H Thin Films

Evaluation Of Microstructures And Carrier Transport Behaviors During The Transition Process From Amorphous To Nanocrystalline Silicon Thin Films

Existence of Electron and Hole Pockets and Partial Gap Opening in the Correlated Semimetal Ca3Ru2O7

Effects of Dissolved Nitrogen in Improving Barrier Properties of Ruthenium

Strain Relaxation Induced Transverse Resistivity Anomalies in SrRuO3 Thin Films

Band Engineering of Amorphous Silicon Ruthenium Thin Film and Its Near-Infrared Absorption Enhancement Combined with Nano-Holes Pattern on Back Surface of Silicon Substrate

New Paramagnetic Center and High Conductivity in A-Si1-xrux:H Thin Films

Structural properties of hydrogenated amorphous silicon carbide alloys

Microstructures and Carrier Transport Behaviors of Nanocrystalline Silicon Thin Films

Effect of Zr Incorporation on Microstructure and Properties of Magnetron Sputtered RuZr Thin Films

Structural Variation and Its Influence on the 1/f Noise of A-Si1-xrux Thin Films Embedded with Nanocrystals

Anisotropy of Mobility Ratio Between Electron and Hole along Different Orientations in Regexsi1.75-X Thermoelectric Single Crystals

Thermal Relaxation Behaviour of As in Supersaturated Si Studied by Channeling, Hall Effect Measurements and Transmission Electron Microscopy

Localization Effect in Single Crystal of RuAs2

Structural Phase Transition Induced Enhancement of Carrier Mobility of Monolayer RuSe2

Annealing Effect on Optical and Electronic Properties of Silicon Rich Amorphous Silicon-Carbide Films

Interface-induced transverse resistivity anomaly in AgNbO3/SrRuO3 heterostructures

Carrier Conduction in Heterojunction of Hydrogenated Nanocrystalline Silicon with Crystal Silicon