Abstract:Transition metal dichalcogenides (TMDs) represent an important family of two-dimensional materials with diverse crystal structures and physical properties, offering a broad platform for scientific research and device applications. The diversity of TMDs' properties arises not only from their relatively large family but also from the variety of their crystal structure phases. The most common structures of TMDs are the trigonal prismatic phase (H phase) and the octahedral phase (T phase). Studies have shown that, in addition to these two high-symmetry phases, TMDs also have other distorted phases. Distorted phases often exhibit different physical properties from symmetric phases and can perform better in certain systems. Given the structural differences between different distorted phases can sometimes be very small, it is experimentally challenging to observe the coexistence of multiple distorted phases. Therefore, it is meaningful to theoretically explore the structural stability and physical properties of different distorted phases. In this study, we investigate the structure and phase transition of monolayer RuSe2 through first-principles calculation. While confirming its ground state as the dimerized phase (T$^\prime$ phase), we identify the existence of another energetically competitive trimerized phase (T$^{\prime\prime\prime}$ phase). By comparing the energies of four different structures and combining the results of phonon spectra and molecular dynamics simulations, we predicted the stability of the T$^{\prime\prime\prime}$ phase at room temperature. Given that the H and T phases of two-dimensional RuSe2 have already been observed experimentally, and considering that the energy of the T$^{\prime\prime\prime}$ phase is much lower than that of the H and T phases, it is highly likely that the T$^{\prime\prime\prime}$ phase exists in experiment. Combined with calculations of the phase transition barrier and molecular dynamics simulations, we anticipate that applying slight stress to the T$^\prime$ phase structure at room temperature can induce a lattice transition from T$^\prime$ to T$^{\prime\prime\prime}$ phase. This phase transition results in significant changes in the band structure and carrier mobility, with the bandgap changing from an indirect bandgap of 1.11 eV to a direct bandgap of 0.71 eV, and the carrier mobility in the armchair direction increasing from $0.82 \times 10^3 \, \text{cm}^2\text{V}^{-1}\text{s}^{-1}$ to $3.22 \times 10^3 \, \text{cm}^2\text{V}^{-1}\text{s}^{-1}$, an approximately threefold enhancement. Our work contrasts and investigates two possible coexisting distorted phases in monolayer RuSe2, analyzing their electronic structures and carrier mobilities, thereby facilitating experimental investigations of two-dimensional RuSe2 materials and their applications in future electronic devices.

Structural Phase Transition Induced Enhancement of Carrier Mobility of Monolayer RuSe2

Structural Phase Transition of Multilayer VSe2.

Associated Lattice and Electronic Structural Evolutions in Compressed Multilayer ReS2

Significantly Increased Raman Enhancement on MoX2 (X = S, Se) Monolayers upon Phase Transition

Unraveling High-Yield Phase-Transition Dynamics in Transition Metal Dichalcogenides on Metallic Substrates.

Prediction of high carrier mobility for novel Janus Mo8S6Se6 monolayers with different phases: first principles calculations

Defect-assisted reversible phase transition in mono- and few-layer ReS$_2$

Evolution of the Fermi Surface of 1T-VSe2 across a Structural Phase Transition

Structural phase transitions in VSe2: energetics, electronic structure and magnetism

Phase-selective in-plane heteroepitaxial growth of H-phase CrSe2

Investigating phase transitions from local crystallographic analysis based on statistical learning of atomic environments in 2D MoS 2 -ReS 2

First-principles Studies on the Crystal Structure and Electronic Properties of Two-Dimensional RuO2 and OsO2

The regulation of symmetry-breaking-dependent electronic structures in ReSeS monolayer

A New Phase of the Two-Dimensional ReS2 Sheet with Tunable Magnetism

Monolayer RuTe 2 : A promising thermal management material

Low-energy nine-layer rhombohedral stacking of transition metal dichalcogenides

Reversible H-T′ Phase Transition in Monolayer Molybdenum Disulfide Via Electron Beam Assisted Solid State Lithiation/delithiation

Magnetic Ordering and Structural Phase Transitions in a Strained Ultrathin SrRuO3/SrTiO3 Superlattice.

Strain-induced two-dimensional topological insulators in monolayer 1T'-RuO2

Metastable Phase Control of Two-Dimensional Transition Metal Dichalcogenides on Metal Substrates

Room Temperature Bound Excitons and Strain-Tunable Carrier Mobilities in Janus Monolayer Transition-Metal Dichalcogenides.