Smooth, Low-Resistance, Pinhole-Free, Conformal Ruthenium Films by Pulsed Chemical Vapor Deposition
Xinwei Wang,Roy G. Gordon
DOI: https://doi.org/10.1149/2.003303jss
IF: 2.2
2012-01-01
ECS Journal of Solid State Science and Technology
Abstract:Ruthenium (Ru) metal has many unique properties. It has a relatively high work function, its oxide, RuO2, is conductive, and it is compatible with many high-κ dielectric oxides, such as SrTiO3 1 and TiO2. 2 Hence, Ru is being considered for electrodes in dynamic random access memories (DRAM) 2 and gate metal in metal-oxidesemiconductor-field-effect (MOSFET) transistors. 3 Ru can also be used as a seed layer for electrodeposition of copper interconnects. 4 Many chemical processes use ruthenium as a catalyst. 5 Preparing thin Ru films with good properties, such as high density, low resistivity, and pinhole-free smooth surfaces, has raised much interest in industry recently. Vapor deposition is a promising approach to obtain thin Ru films with high quality and uniform thickness even inside narrow features. Several Ru compounds have been studied as precursors for atomic layer deposition (ALD) and chemical vapor deposition (CVD). But many of them, such as Ru(Cp)2, 6 Ru(EtCp)2, 4 Ru(thd)3, 7,8 bis(2,4-dimethylpentadienyl)ruthenium, 9 and bis(2,6, 6-trimethyl-cyclohexadienyl)ruthenium, 10 need to react with O2 in order to deposit Ru films. This may cause some unwanted oxidation of conductive substrates, such as titanium nitride in DRAM electrodes or tantalum nitride diffusion barriers in microelectronic interconnects. Recently, several Ru cyclooctatetraene precursors were reported to deposit Ru films with H2 in a reducing ambient, 11 however, the reported resistivity of deposited Ru films is quite high, 11 which may be due to a high-level carbon impurity from the precursors or to a low film density. Gordon and coworkers have synthesized an amidinate Ru precursor, bis(N,N � -di-tert-butylacetamidinato)ruthenium(II) dicarbonyl, which can react with NH3 to produce Ru films by ALD 12,13 and also in a non-oxidizing ambient. 13 However, the best film properties were obtained by including small amounts of oxygen in the ALD process. 14 ALD is a very slow process, so we investigated the use of this precursor in chemical vapor deposition (CVD) conditions. In this paper, we used this amidinate precursor to deposit thin Ru films with a pulsed CVD method. We were able to obtain dense, low resistive, pure and conformal Ru films with smooth and pinhole-free surfaces. We further examined the conformality of Ru films deposited inside narrow holes, in which the films showed good step coverage.