Crystallization and Oxidation Behaviors of Cr-Si-Ni-N Resistive Films

Jian Wu
2002-01-01
Journal of Functional Biomaterials
Abstract:Cr Si Ni N films with different nitrogen contents were fabricated in a sputtering atmosphere of which the partial pressure ratio P N 2 / P Ar 2 was 0%, 2.5%, 5%, and 10% respectively. Further more, the crystallization and oxidation behaviors as well as the variations of electrical properties of these films during heat treatment were investigated. The results showed that, when amorphous Cr Si Ni N films were heated up, crystallization phase CrSi 2 was formed. The addition of N into the films inhibited the nucleation and growth of the crystallization phase; however, the oxidation resistance of the films was improved. For high nitrogen Cr Si Ni N films in comparison with low nitrogen Cr Si Ni N films, the variation of electrical resistance was smaller during the heat treatment, and the higher annealing temperatures was needed to obtain a small temperature coefficient of resistance (TCR).
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