Improved diffusion barrier performance of Ru/TaN bilayer by N effusion in TaN underlayer

Lei Wang,Zhenhua Cao,Kai Hu,Qianwei She,Xiangkang Meng
DOI: https://doi.org/10.1016/j.matchemphys.2012.05.061
IF: 4.778
2012-01-01
Materials Chemistry and Physics
Abstract:Two bilayers of Ru/TaN with low N concentration and high N concentration (TaNL and TaNH) were used to determine the effect of N effusion on the barrier property. The results show that Ru/TaNH bilayer exhibits a better barrier property, in which RuN existed even after annealing at 650°C. The improved barrier property is attributed to the formation of RuN and N atoms stuffing in grain boundaries of Ru layer by sufficient effusion N atoms from TaNH during annealing.
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