Cu contact on NiSi substrate with a Ta/TaN barrier stack
Mi Zhou,Ying Zhao,Wei Huang,Bao-Min Wang,Guo-Ping Ru,Yu-Long Jiang,Ran Liu,Xin-Ping Qu
DOI: https://doi.org/10.1016/j.mee.2008.04.047
IF: 2.3
2008-01-01
Microelectronic Engineering
Abstract:The thermal and electrical stabilities of Cu contact on NiSi substrate with and without a Ta/TaN barrier stack in between were investigated. Four-point probe (FPP), X-ray diffraction (XRD), scanning electron microscopy (SEM), depth-profiling X-ray photoelectron spectroscopy (XPS), and Schottky barrier height (SBH) measurement were carried out to characterize the diffusion barrier properties. The SBH measurement provides a very sensitive method to characterize the diffusion barrier properties for the copper contact on NiSi/Si. The results show that the Ta/TaN stack can be both thermally and electrically stable after annealing at 450^oC for 30min and it will have a potential application as a diffusion barrier for Cu contact on NiSi.