Abstract:Novel Ni-doped TaN (Ni-Ta-N) films are deposited by remote plasma-enhanced atomic layer deposition (ALD) with pentakis(dimethylamino) tantalum, nickelocene, and NH3 precursors for Cu diffusion barriers. Various Ni-Ta-N films with different compositions are achieved by changing the deposition cycles (n) of Ni sublayer while fixing the deposition cycles of TaN sublayer at 2. As n increases from 1 to 6, the root-mean-square roughness of the deposited film increases from 0.150 to 0.527 nm, and the resistivity decreases from 0.18 to 1.1 x 10(-2) Omega cm. After annealing at 400 degrees C for 30 min in the forming gas (N-2/H-2), these films still maintain an amorphous texture and demonstrate a negligible reduction of resistivity and a weak increase of density. Subsequently, the barrier effects of the Ni-Ta-N films with different compositions are compared against Cu diffusion after annealing. The results reveal that the Ni-Ta-N films with n <= 4 exhibit barrier effects comparable with the ALD TaN film even after annealing at 550 degrees C. Further, a 3 nm ultrathin Ni-Ta-N film with n = 4, corresponding to an addition of similar to 22 at. % Ni to TaN, cannot only reduce the film resistivity by 78% but also effectively block Cu diffusion after annealing at 450 degrees C for 30 min. Published by the AVS.

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