Abstract:Cu has been adopted to replace Al for conduction lines and contact structures in very large-scale integrated circuits due to its low resistivity. However, Cu could rapidly react with the SiO2-based dielectric under 300 degrees C and form deep level impurities which are strong sink for carriers, leading to the dielectric degradation of the devices. Therefore, it is important to insert a stable barrier between the Cu wiring and SiO2-based dielectric for suppressing Cu diffusion and improving the adhesive strength. The prediction of international technology roadmap for semiconductors that the thickness of diffusion barrier would be further reduced to 3 nm for 22 nm technology node indicates the widely being used Ta/TaN barrier would be incompetent in the future, since Ta/TaN barrier at the limited thickness exhibits a high resistivity and a columnar grain structure which provides lots of vertical grain boundaries for Cu diffusion. Therefore a directly platable amorphous single barrier with low resistivity is highly desired. In this work, MoC are chosen as impurity to expect for amorphous Ru-based films. The RuMoC films with different components were deposited by RE magnetron co-sputtering with different deposition power ratios of MoC versus Ru targets. The sheet resistances, microstructures and components of the RuMoC films in Ru-MoC/Si and Cu/RuMoC/p-SiOC: H/Si structures were studied. The sheet resistances, residual oxygen contents and microstructures of the RuMoC films have close correlation with the doping contents of Mo and C elements which can be easily controlled by tuning the deposition power on MoC target. When the deposition power ratio of MoC versus Ru targets was 0.5, amorphous RuMoC II film with low sheet resistance and residual oxygen content was obtained. After annealing at 500 degrees C the Mo-C and Ru-C bonds were well-preserved and co-suppressed the recrystallization of the film and the increasing of the oxygen content, contributing to excellent thermal stability and electrical properties of Cu/RuMoC II/p-SiOC: H/Si film.

Thermal Stability of Ultrathin RuC Film As Cu Diffusion Barrier

Sputtered Ru–Ti, Ru–N and Ru–Ti–N Films As Cu Diffusion Barrier

Cu Contact on NiSi/Si with a Ru/TaN Barrier Stack

Comparison of Ru/Ta and Ru/TaN as Barrier Stack for Copper Metallization

Ru/TaSiN with different Ta/Si atomic ratio as barrier for Cu contact on NiSi substrate

Improved Barrier Properties of Ultrathin Ru Film with Tan Interlayer for Copper Metallization

Characterization of Thermal Stability of RuMoC Films as Seedless Cu Diffusion Barriers in Damascene Structures for Cu Interconnects

Microstructure and Thermal Stability of Moc Doped Ru-Based Alloy Films As Seedless Diffusion Barrier

Thermal Stability of Ruzr Alloy Thin Films As the Diffusion Barrier in Cu Metallization

Ruthenium Barrier/Seed Layer for Cu/Low-κ Metallization

Improved diffusion barrier properties and NiSi thermal stability for the Cu contact with the Ru/TaSiN stack on NiSi/Si

Interface Stability and Microstructure of an Ultrathin Α-Ta/graded Ta(N)/TaN Multilayer Diffusion Barrier

Cu Contact on NiSi/Si with Thin Ru/TaN Barrier

Performance Improved by Incorporating of Ru Atoms into Zr-Si Diffusion Barrier for Cu Metallization

Ultrathin Ru–Ta–C Barriers for Cu Metallization

The Inhibition of Enhanced Cu Oxidation on Ruthenium∕Diffusion Barrier Layers for Cu Interconnects by Carbon Alloying into Ru

Improvement of Diffusion Barrier Performance of Ru Thin Film by Incorporating a WHfN Underlayer for Cu Metallization

Thermal stability of Ta-Si-N/Zr barrier in Cu metallization

The properties of Ru on Ta-based barriers

Low-Resistivity Ru-Ta-C Barriers for Cu Interconnects

Cu contact on NiSi substrate with a Ta/TaN barrier stack