Abstract:The thermal and electrical stabilities of Cu contact on NiSi substrate with and without a Ru/TaN barrier stack were investigated. Four point probe (FPP), X-ray diffraction (XRD), scanning electron microscopy (SEM), and Schottky barrier height (SBH) measurement were carried out to characterize the diffusion barrier properties. The results show that the Ru(14 nm)/TaN(15 nm) stack can be both thermally and electrically stable up to 500°C annealing for 30 minutes and it will have potential application as a diffusion barrier for Cu contact on NiSi.

Cu Contact on NiSi/Si with a Ru/TaN Barrier Stack