The Inhibition of Enhanced Cu Oxidation on Ruthenium∕Diffusion Barrier Layers for Cu Interconnects by Carbon Alloying into Ru

Shao-Feng Ding,Qi Xie,Steve Mueeller,Thomas Waechtler,Hai-Sheng Lu,Stefan E. Schulz,Christophe Detavernier,Xin-Ping Qu,Thomas Gessner
DOI: https://doi.org/10.1149/2.041112jes
IF: 3.9
2011-01-01
Journal of The Electrochemical Society
Abstract:The inhibition of Cu oxidation by alloying C into the Ru/TaN barrier stack is investigated. By using in-situ XRD measurement, severe copper oxide formation was observed for the Cu/Ru/barrier system during annealing process in He atmosphere. This phenomenon is explained using thermodynamics from the viewpoint of Gibbs free energy of oxide formation. The Cu oxidation can be inhibited by alloying C into the Ru layer, and the more C content in the RuC layer, the more evident the inhibition effect. The RuC/TaN stack also shows better diffusion barrier properties than the Ru/TaN bi-layer. Atomic layer deposition of Cu2O on the RuC substrate was carried out and reduction of the Cu2O to Cu was observed. The mechanism of inhibition of Cu oxidation on C alloyed Ru was investigated by a first principles calculation based on the density functional theory. (C) 2011 The Electrochemical Society. [DOI: 10.1149/2.041112jes] All rights reserved.
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