Abstract:In this work, thin films of TaN were synthesized on 304 steel substrates using the reactive DC sputtering technique from a tantalum target in a nitrogen/argon atmosphere. All synthesis parameters such as gas ratio, pressure, gas flow, and substrate distance, among others, were fixed except the applied power of the source for different deposited coatings. The effect of the target power on the formation of the resulting phases and the microstructural and morphological characteristics was studied using XRD and AFM techniques, respectively, in order to understand the growth mechanisms. Phase, line profile, texture, and residual stress analysis were carried out from the X-ray diffraction patterns obtained. Atomic force microscopy analysis allowed us to obtain values for surface grain size and roughness which were related to growth mechanisms in accordance with XRD results. Results obtained showed a strong correlation between the growth energy with the crystallinity of the samples and the formation of the possible phases since the increase in the growth power caused the samples to evolve from an amorphous structure to a cubic monocrystalline structure. For all produced samples, the δ-TaN phase was observed despite the low N2 content used in the process (since for low N2 content it was expected to be possible to obtain films with α-Ta or hexagonal ε-TaN crystalline structure). In order to determine the corrosion resistance of the coatings, electrochemical impedance spectroscopy and polarization resistance were employed in the Tafel region. The results obtained through this evaluation showed a direct relationship between the power used and the improvement of the properties against corrosion for specific grain size values.

Growth of cubic-TaN thin films by plasma-enhanced atomic layer deposition

The physical properties of cubic plasma-enhanced atomic layer deposition TaN films

Diffusion Barrier Properties of TaNx Films Prepared by Plasma Enhanced Atomic Layer Deposition from PDMAT with N2 or NH3 Plasma

Tacn Growth with Pdmat and H-2/Ar Plasma by Plasma Enhanced Atomic Layer Deposition

Growth of conformal TiN thin film with low resistivity and impurity via hollow cathode plasma atomic layer deposition

Highly-Conformal TiN Thin Films Grown by Thermal and Plasma-Enhanced Atomic Layer Deposition

Ru thin film grown on TaN by plasma enhanced atomic layer deposition

Effects of nitrogen composition on the resistivity of reactively sputtered TaN thin films

Deposition of TiN and TaN by Remote Plasma ALD for Cu and Li Diffusion Barrier Applications

High-quality Ru thin film grown on TaN by plasma enhanced atomic layer deposition(PEALD)

Atomic layer deposition of amorphous Ni-Ta-N films for Cu diffusion barrier

Structural and electrical properties of tantalum nitride thin films fabricated by using reactive radio-frequency magnetron sputtering

COMPOSITION CONTROL AND ITS ELECTRICAL PROPERTIES OF TaNx THIN FILMS

The effect of NH3 plasma pulse time on atomic layer-deposited TiN films using tetrakis-(dimethylamino) titanium as a metal precursor

Characteristics of TiN thin films grown by ALD using TiCl4 and NH3

Low Temperature Deposition of TiN Using Tetrakis(dimethylamido)‐Titanium in an Electron Cyclotron Resonance Plasma Process

The Effect of Deposition Temperature of TiN Thin Film Deposition Using Thermal Atomic Layer Deposition

Microstructure and Mechanical Properties of TaN Thin Films Prepared by Reactive Magnetron Sputtering

Tribological Properties of Ta‐C‐N and Ta‐N Thin Films

Growth Mechanisms of TaN Thin Films Produced by DC Magnetron Sputtering on 304 Steel Substrates and Their Influence on the Corrosion Resistance

Reactive sputter deposition and properties of TaxN thin films