Anisotropy of Mobility Ratio Between Electron and Hole along Different Orientations in Regexsi1.75-X Thermoelectric Single Crystals

JJ Gu,MW Oh,H Inui,D Zhang
DOI: https://doi.org/10.1103/physrevb.71.113201
2005-01-01
Abstract:It was recently found that ReSi1.75 based semiconductor single crystals can be of either p or n type with a fixed composition, just depending on their different crystal orientations. To investigate the mechanism of this interesting phenomenon, we grow ReGexSi1.75-x (x=0.02 and 0.04) single crystals with a floating zone method with radiation heating. The Seebeck coefficient and electric resistivity of these samples are measured along [100] and [001], respectively. The conduction mechanism is of p type along [100] and of n type along [001], like binary ReSi1.75, in the temperature range 50 to 800 degrees C. The mobility ratio between electron and hole is calculated from the Seebeck coefficient data and it is highly anisotropic along two different orientations (about 0.4 to 0.6 along [100] while 4 to 5 along [001] direction), giving rise to the orientation-dependent conduction sign reversal phenomenon observed in ReSi1.75.
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