Crystal Structures, Superconducting Properties, and the Coloring Problem in ReAlSi and ReGaSi

Victoria Decocq,Xin Gui,Alec Neeson,Weiwei Xie,Thomas Heitmann,Fei Wang
DOI: https://doi.org/10.1021/acs.inorgchem.0c02578
IF: 4.6
2020-11-16
Inorganic Chemistry
Abstract:The only nonsuperconducting rhenium–silicon binary compound, ReSi<sub>1.75</sub>, was heavily p-doped with Ga and Al into ReGaSi and ReAlSi in an attempt to evoke superconductivity. They were synthesized and their crystal structures were studied by both X-ray and neutron diffraction. Si and Ga/Al atoms are ordered into alternating layers, which was rationalized with the "coloring problem" study via first-principles calculations. ReGaSi cannot be further p-doped with more Ga, but ReAlSi can be doped with more Al to ReAl<sub>1.2</sub>Si<sub>0.8</sub>, in which Si and Al atoms are not ordered but randomly distributed on the same sites. The superconductivity measurements over these compounds demonstrate that the ordered ReAlSi and ReGaSi are not bulk superconductors. However, ReAl<sub>1.2</sub>Si<sub>0.8</sub> becomes bulk superconductor with <i>T</i><sub>c</sub> = ∼3.5 K, which has been confirmed by magnetism, resistivity, and specific heat measurements.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acs.inorgchem.0c02578?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acs.inorgchem.0c02578</a>.Detailed results of the computational "coloring problem" study, the density of states of ReAlSi and ReAl<sub>1.25</sub>Si<sub>0.75</sub>, powder XRD patterns of Al-richer samples, the electrical resistivity of ReGaSi, and magnetic measurements of ReAlSi and ReAl<sub>1.2</sub>Si<sub>0.8</sub> (<a class="ext-link" href="/doi/suppl/10.1021/acs.inorgchem.0c02578/suppl_file/ic0c02578_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.
chemistry, inorganic & nuclear
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