Abstract:With the development of new designs and materials for nano-scale transistors, vertical Gate-All-Around Field Effect Transistors (vGAAFETs) with germanium as channel materials have emerged as excellent choices. The driving forces for this choice are the full control of the short channel effect and the high carrier mobility in the channel region. In this work, a novel process to form the structure for a VGAA transistor with a Ge channel is presented. The structure consists of multilayers of Si0.2Ge0.8/Ge grown on a Ge buffer layer grown by the reduced pressure chemical vapor deposition technique. The Ge buffer layer growth consists of low-temperature growth at 400 °C and high-temperature growth at 650 °C. The impact of the epitaxial quality of the Ge buffer on the defect density in the Si0.2Ge0.8/Ge stack has been studied. In this part, different thicknesses (0.6, 1.2 and 2.0 μm) of the Ge buffer on the quality of the Si0.2Ge0.8/Ge stack structure have been investigated. The thicker Ge buffer layer can improve surface roughness. A high-quality and atomically smooth surface with RMS 0.73 nm of the Si0.2Ge0.8/Ge stack structure can be successfully realized on the 1.2 μm Ge buffer layer. After the epitaxy step, the multilayer is vertically dry-etched to form a fin where the Ge channel is selectively released to SiGe by using wet-etching in HNO3 and H2O2 solution at room temperature. It has been found that the solution concentration has a great effect on the etch rate. The relative etching depth of Ge is linearly dependent on the etching time in H2O2 solution. The results of this study emphasize the selective etching of germanium and provide the experimental basis for the release of germanium channels in the future.

Ge/Si superlatices grown on thin relaxed GeSi alloy buffer with Ge islanding buried layer

Suppression of Si-Ge Interfacial Vibration Mode in the Raman Spectrum of A Si6ge4 Superlattice

Growth of Ge Layer on Relaxed Ge-Rich SiGe by Ultrahigh Vacuum Chemical Vapor Deposition

Epitaxial growth of low dislocation Ge thin films on Si (001) substrates using a Si-Ge intermediate layer

The growth and investigation of SiGe films on buried Ge islands

HV/CVD Grown Relaxed SiGe Buffer Layers for SiGe HMOSFETs

Epitaxial Growth of Fully Relaxed Si0.75Ge0.25 on SOI Substrate

Chemical vapor deposition of Ge films on Si1-xGex:C buffers

Structural Mapping of Functional Ge Layers Grown on Graded SiGe Buffers for sub-10 nm CMOS Applications Using Advanced X-ray Nanodiffraction

Strained Si0.2Ge0.8/Ge multilayer Stacks Epitaxially Grown on a Low-/High-Temperature Ge Buffer Layer and Selective Wet-Etching of Germanium

3C-SiC grown on Si by using a Si$_{1-x}$Ge$_x$ buffer layer

Secondary growth mechanism of SiGe islands deposited on a mixed-phase microcrystalline Si by ion beam co-sputtering

Microstructures of Ge/Si Superlattices Growth at Low Temperature

High-quality germanium growth on (111)-faceted V-groove silicon by molecular beam epitaxy

Effect of Interlayer Strain Interaction on the Island Composition and Ordering in Ge/Si(001) Island Superlattices

Cvd Growth of Ge Films on Graded Si1-Xgex: C Buffers

Structural Characteristics of Self-Assembled-Ge/Si Quantum Dot Superlattices

Sige Epitaxy with Graded Buffer by Ultrahigh Vacuum Chemical Vapor Deposition

Microstructures of Ge/Si Superlattices Growtn at Low Temperature

Theoretical Study of Structures and Growth of Strained Si/Ge Superlattices

Delayed plastic relaxation limit in SiGe islands grown by Ge diffusion from a local source