Abstract:The two-dimensional (2D) materials provide an excellent platform for the study of the dimensional effect. The richer the types of 2D materials, the broader the unknown field we can explore. However, among the large number of 2D materials manufactured by humans, true single-crystalline (SC) atomically thin 2D metals are rare. The instability of SC 2D metal materials puts high demands on its fabrication process. By implementing molecular dynamics (MD) simulations, we proved that the SC biatomic-layer (BL) gallium film can be formed at the interface between two graphene layers. The Ga atoms deposited on the surface of the graphene on the copper substrate will spontaneously evolve into independent liquid nano-islands, and then cover the nano-island with a monolayer graphene. When the Ga nano-islands confined under the graphene layer are heated to 500 °C, they will expand into a BL Ga film, and finally, the entire system is cooled to room temperature to obtain the SCBL Ga film. It is found that these nano-islands are in the liquid state at ∼400 °C, but they undergo a phase transition and evolve into the solid state at ∼500°C. At the same time, the nano-islands also drop from 3D to 2D. In addition, the vertical heterostructure with moiré superstructure is formed between the SCBL Ga and the top layer graphene. The calculations of the electronic properties show that the Dirac conical point of the graphene in the heterostructure is shifted below the Fermi level, which proves that SCBL Ga is able to induce semimetallic to metallic conversion in graphene, indicating SCBL Ga can be used for metal contacts in 2D devices.

Nanoscale Superconductivity of Γ-Ga Islands Grown by Molecular Beam Epitaxy

Superconductivity in Two-Monolayer Hexagonal Ga Film on GaN

Detection Of A Superconducting Phase In A Two-Atom Layer Of Hexagonal Ga Film Grown On Semiconducting Gan(0001)

Synthesis and Characterization of Heteroepitaxial Gan Films on Si(111)

From regular arrays of liquid metal nano-islands to single crystalline biatomic-layer gallium film: Molecular dynamics and first principle study

Size-dependent Superconducting State of Individual Nanosized Pb Islands Grown on Si(111) by Tunneling Spectroscopy.

Microscopic Study of Submonolayer Nucleation Characteristics During GaN (0001) Homoepitaxial Growth

Unconventional Vortex Core Structure in Quantum-Confined Superconducting Ga Islands

The growth and investigation of SiGe films on buried Ge islands

Stm Study of the Ga Thin Films Grown on Si(111) Surface

Island dynamics and anisotropy during vapor phase epitaxy of m-plane GaN

Quasi-Van der Waals Epitaxial Growth of γ'-GaSe Nanometer-Thick Films on GaAs(111)B Substrates

Superconductivity and parity preservation in as-grown In islands on InAs nanowires

Self-organized germanium quantum dots grown by molecular beam epitaxy on Si(100)

Ordered Ga Wires Formed On Si(100)-2xn: Scanning Tunneling Microscopy Study

Electronic Structure of Free-Standinggaas∕algaasnanowire Superlattices

Molecular dynamics simulations and experimental studies on low-temperature growth of GaN

Growth Of Atomically Flat Nanofilms And Surface Superstructures Of Intrinsic Liquid Alloys

Molecular Beam Epitaxy Growth of Gaasbi/Gaas/Algaas Separate Confinement Heterostructures

Nanoscale phase separation on an AlGaN surface characterized by scanning diffusion microscopy

Investigation Of Preparation And Properties Of Epitaxial Growth Gan Film On Si(111) Substrate