Abstract:In situ synthesized semiconductor/superconductor hybrid structures became an important material platform in condensed matter physics. Their development enabled a plethora of novel quantum transport experiments with focus on Andreev and Majorana physics. The combination of InAs and Al has become the workhorse material and has been successfully implemented in the form of one-dimensional structures and two-dimensional electron gases. In contrast to the well-developed semiconductor parts of the hybrid materials, the direct effect of the crystal nanotexture of Al films on the electron transport still remains unclear. This is mainly due to the complex epitaxial relation between Al and the semiconductor. Here, we present characterization of Al thin films grown on shallow InAs two-dimensional electron gas systems by molecular beam epitaxy. Using a growth approach based on an intentional roughening of the epitaxial interface, we demonstrate growth of grain-boundary-free Al. We show that the implemented roughening does not negatively impact either the electron mobility of the two-dimensional electron gas or the basic superconducting properties of the proximitized system. This is an important step in understanding the role of properties of the InAs/Al interface in hybrid devices. Ultimately, our results provide a growth approach to achieve a high-degree of epitaxy in lattice-mismatched materials. Received 18 January 2023 Accepted 2 June 2023 Published by the American Physical Society Physics Subject Headings (PhySH) Research Areas Andreev reflectionCrystal growthCrystal phenomenaProximity effect Physical Systems III-V semiconductorsInterfacesJosephson junctionsSingle crystal materialsTwo-dimensional electron system Techniques EpitaxyMolecular beam epitaxyTransmission electron microscopy Condensed Matter, Materials & Applied Physics

Superconductivity and parity preservation in as-grown In islands on InAs nanowires

Epitaxial Pb on InAs nanowires

Sn/InAs Josephson junctions on selective area grown nanowires with in-situ shadowed superconductor evaporation

Controlled-Direction Growth of Planar InAsSb Nanowires on Si Substrates Without Foreign Catalysts

In Situ Epitaxy of Pure Phase Ultra-Thin InAs-Al Nanowires for Quantum Devices

<i>In Situ</i> Epitaxy of Pure Phase Ultra-Thin InAs-Al Nanowires for Quantum Devices

Fate of the superconducting state in floating islands of hybrid nanowire devices

Supercurrent, Multiple Andreev Reflections and Shapiro Steps in InAs Nanosheet Josephson Junctions

Catalyst-Free Heteroepitaxial MOCVD Growth of InAs Nanowires on Si Substrates

Sn/InAs Josephson Junctions on Selective Area Grown Nanowires with in Situ Shadowed Superconductor Evaporation

Epitaxy of Semiconductor-Superconductor nanowires

Parity-preserving and magnetic field resilient superconductivity in indium antimonide nanowires with tin shells

Coherent Charge Transport in Ballistic InSb Nanowire Josephson Junctions

Epitaxial Indium on PbTe Nanowires for Quantum Devices

Control over epitaxy and the role of the InAs/Al interface in hybrid two-dimensional electron gas systems

Fully in-situ InAs nanowire Josephson junctions by selective-area growth and shadow evaporation

From Twinning to Pure Zincblende Catalyst-Free Inas(Sb) Nanowires

Parity transitions in the superconducting ground state of hybrid InSb-Al Coulomb islands

MBE Growth of Al/InAs and Nb/InAs Superconducting Hybrid Nanowire Structures

Dislocation-free axial InAs-on-GaAs nanowires on silicon

Andreev Interference in the Surface Accumulation Layer of Half-Shell InAsSb/Al Hybrid Nanowires