Abstract:High spin-orbit coupling and low effective mass of electrons in InAs nanowires makes it an attractive material for studying quantum physics in mesoscopic and nanoscale quantum devices. We first study the transport properties of FET devices made of InAs nanowires of diameter in the range of 35-70 nm. The temperature dependence of electron mobility in InAs nanowires from 10-200 K exhibits a positive slope below approximately 40 K, then turns over to a negative slope at higher temperatures. This is explained by Coulomb scattering from the surface donor like states that give rise to a subsurface accumulation layer and the thermal activation of these surface donors. The scattering rates are calculated using a momentum relaxation time approximation. The transition probabilities between the self-consistent Poisson-Schrödinger states of a 50 nm diameter nanowire are calculated using Fermi’s golden rule. The results clarify the dominant scattering mechanism in InAs nanowires and signify the need for surface passivation to obtain high mobility devices. In a second study, we model a gate defined double quantum dot in the nanowire with high spin-orbit coupling in order to determine the precise gate voltage dependence of the exchange Hamiltonian. This modelling is critical for designing two-qubit quantum logic operations in the nanowire double dot architecture. A quantum double well structure is simulated based on the realistic potential created by a set of fine local electrostatic gates in the presence of nanowire surface accumulation layer. An effective spin Hamiltonian is derived for a pair of interacting electrons localized in the double dot system in the presence of a strong spin-orbit coupling. The accuracy of the effective Hamiltonian is established by a strong agreement obtained between the dynamics generated by the effective Hamiltonian with those obtained by a numerically exact solution of the time-dependent Schrödinger equation. The parametric dependences of the effective exchange Hamiltonian on external magnetic field, barrier gate voltage, and spin-orbit field is determined. This opens the door to designing optimal pulses for high fidelity quantum gates in real InAs nanowire devices.

Andreev Interference in the Surface Accumulation Layer of Half-Shell InAsSb/Al Hybrid Nanowires

Flux-periodic supercurrent oscillations in an Aharonov-Bohm-type nanowire Josephson junction

Andreev reflection versus Coulomb blockade in hybrid semiconductor nanowire devices

Microwave spectroscopy of Andreev states in InAs nanowire-based hybrid junctions using a flip-chip layout

Charge Transport in InAs Nanowire Josephson Junctions

Proximity Effect, Andreev Reflections, and Charge Transport in Mesoscopic Superconducting-Semiconducting Heterostructures

Supercurrent and Multiple Andreev Reflections in an InSb Nanowire Josephson Junction

Topological States and Interplay Between Spin-Orbit and Zeeman Interactions in a Spinful Su-Schrieffer-Heeger Nanowire

Numerical studies of transport and anisotropic exchange interaction in InAs nanowires

Andreev molecules in semiconductor nanowire double quantum dots

Supercurrent, Multiple Andreev Reflections and Shapiro Steps in InAs Nanosheet Josephson Junctions

Andreev Tunneling Enhanced by Coulomb Oscillations in Superconductor-Semiconductor Hybrid Ge/Si Nanowire Devices

Hybrid Superconductor-Quantum Point Contact Devices using InSb Nanowires

Electronic properties of InAs/EuS/Al hybrid nanowires

Andreev Reflection Enhanced Single Hole Tunneling in Ge/Si Core/shell Nanowire Quantum Dot

Coherent Charge Transport in Ballistic InSb Nanowire Josephson Junctions

Controlled crossed Andreev reflection and elastic co-tunneling mediated by Andreev bound states

Proximity effect and interface transparency in Al/InAs-nanowire/Al diffusive junctions

Andreev bound states and supercurrent in disordered spin-orbit-coupled nanowire SNS-junctions

Study of 0-$π$ phase transition in hybrid superconductor-InSb nanowire quantum dot devices

Gate-tuned Aharonov-Bohm Interference of Surface States in a Quasi-Ballistic Dirac Semimetal Nanowire