Abstract:We investigate the proximity effect in InAs nanowire (NW) junctions with superconducting contacts made of Al. The carrier density in InAs is tuned by means of the back gate voltage $V_g$. At high positive $V_g$ the devices feature transport signatures characteristic of diffusive junctions with highly transparent interfaces - sizable excess current, re-entrant resistance effect and proximity gap values ($\Delta_N$) close to the Al gap ($\Delta_0$). At decreasing $V_g$, we observe a reduction of the proximity gap down to $\Delta_N\approx\Delta_0/2$ at NW conductances $\sim2e^2/h$, which is interpreted in terms of carrier density dependent reduction of the Al/InAs interface transparency. We demonstrate that the experimental behavior of $\Delta_N$ is closely reproduced by a model with shallow potential barrier at the Al/InAs interface.

What problem does this paper attempt to address?

This paper aims to explore the proximity effect in the diffusion junction formed by InAs nanowires (NW) and aluminum (Al) and its variation with the back - gate voltage $ V_g $. Specifically, the research focuses on: 1. **Regulation of the proximity effect**: By changing the carrier density in InAs (controlled by the back - gate voltage $ V_g $), study the influence of the proximity effect on the transport properties. 2. **Change in interface transparency**: Observe and explain the change in the transparency of the Al/InAs interface at different carrier densities, especially the highly transparent interface at high positive $ V_g $ and the phenomenon of reduced transparency at low $ V_g $. 3. **Verification of theoretical models**: Verify the hypothesized shallow - barrier model through experimental data and explain the behavior of the proximity effect as a function of carrier density. ### Main problems and solutions #### 1. Characteristics of the proximity effect - At high positive $ V_g $, the device exhibits typical transport characteristics of a diffusion junction: - Significant excess current - Re - entrant resistance effect - The induced proximity gap value $ \Delta_N $ is close to the superconducting gap $ \Delta_0 $ of aluminum #### 2. Interface transparency depends on carrier density - As $ V_g $ decreases, the proximity gap $ \Delta_N $ decreases to approximately $ \Delta_0/2 $, indicating a carrier - density - dependent decrease in interface transparency. - When the nanowire conductance is approximately $ 2e^2/h $, the proximity gap decreases significantly, which is interpreted as a carrier - density - dependent decrease in the transparency of the Al/InAs interface. #### 3. Comparison between experimental results and theoretical models - Experimental data show that the behavior of the proximity gap $ \Delta_N $ can be well reproduced by the hypothesized shallow - barrier model. - By analyzing the excess current $ I_{exc} $, the important influence of interface transparency on the proximity effect is further confirmed. ### Formula presentation 1. **Definition of excess current**: \[ I_{exc} = \int_0^{|V_{high}|} [G(B = 0)-G(B)] d|V| \] where $ G(B = 0) $ and $ G(B) $ are the differential conductances in zero magnetic field and high magnetic field respectively, and $ |V_{high}|> 2\Delta_0/e $. 2. **Implicit relationship of the proximity gap**: \[ \Delta_N=\frac{\Delta_0}{1 + 0.56\gamma_B\sqrt{1-(\Delta_N/\Delta_0)^2}} \] where $ \gamma_B=\sigma_N/(G_I\xi_N) $, $ \sigma_N $ is the conductivity of InAs, $ \xi_N = (\hbar D/\Delta_0)^{1/2} $ is the coherence length, $ D $ is the diffusion coefficient in InAs, and $ G_I $ is the interface conductance per unit area. ### Conclusion Through this study, the authors revealed the influence of carrier density on the transparency of the Al/InAs interface and proposed that the shallow - barrier model can well explain the experimental results. These findings are of great significance for understanding and optimizing superconducting devices based on InAs nanowires.

Proximity effect and interface transparency in Al/InAs-nanowire/Al diffusive junctions

Fringing Field Effects in Semiconductor Nanowire Double Heterostructures

Charge Transport in InAs Nanowire Josephson Junctions

InAs nanowire superconducting tunnel junctions: spectroscopy, thermometry and nanorefrigeration

Quantized conductance and its correlation to the supercurrent in a nanowire connected to superconductors.

High transparency induced superconductivity in field effect two-dimensional electron gases in undoped InAs/AlGaSb surface quantum wells

Numerical studies of transport and anisotropic exchange interaction in InAs nanowires

Schottky Barrier Heights at the Interfaces Between Pure-Phase Inas Nanowires and Metal Contacts

Andreev Interference in the Surface Accumulation Layer of Half-Shell InAsSb/Al Hybrid Nanowires

Supercurrent Through InAs Nanowires with Highly Transparent Superconducting Contacts

In Situ Epitaxy of Pure Phase Ultra-Thin InAs-Al Nanowires for Quantum Devices

Gate Tunable Energy Gap and Negative Magnetoresistance of InAs/GaSb Core/shell Nanowires

InAs nanowire with epitaxial aluminium as a single-electron transistor with fixed tunnel barriers

<i>In Situ</i> Epitaxy of Pure Phase Ultra-Thin InAs-Al Nanowires for Quantum Devices

Measurement of junction conductance and proximity effect at superconductor/semiconductor junctions

Electrical characterization of chemical and dielectric passivation of InAs nanowires

Anti-proximity Effect in Aluminum Nanowires

Flux-periodic supercurrent oscillations in an Aharonov-Bohm-type nanowire Josephson junction

One-Dimensional Quantum Confinement Effect Modulated Thermoelectric Properties in InAs Nanowires

Fully in-situ InAs nanowire Josephson junctions by selective-area growth and shadow evaporation