Abstract:High spin-orbit coupling and low effective mass of electrons in InAs nanowires makes it an attractive material for studying quantum physics in mesoscopic and nanoscale quantum devices. We first study the transport properties of FET devices made of InAs nanowires of diameter in the range of 35-70 nm. The temperature dependence of electron mobility in InAs nanowires from 10-200 K exhibits a positive slope below approximately 40 K, then turns over to a negative slope at higher temperatures. This is explained by Coulomb scattering from the surface donor like states that give rise to a subsurface accumulation layer and the thermal activation of these surface donors. The scattering rates are calculated using a momentum relaxation time approximation. The transition probabilities between the self-consistent Poisson-Schrödinger states of a 50 nm diameter nanowire are calculated using Fermi’s golden rule. The results clarify the dominant scattering mechanism in InAs nanowires and signify the need for surface passivation to obtain high mobility devices. In a second study, we model a gate defined double quantum dot in the nanowire with high spin-orbit coupling in order to determine the precise gate voltage dependence of the exchange Hamiltonian. This modelling is critical for designing two-qubit quantum logic operations in the nanowire double dot architecture. A quantum double well structure is simulated based on the realistic potential created by a set of fine local electrostatic gates in the presence of nanowire surface accumulation layer. An effective spin Hamiltonian is derived for a pair of interacting electrons localized in the double dot system in the presence of a strong spin-orbit coupling. The accuracy of the effective Hamiltonian is established by a strong agreement obtained between the dynamics generated by the effective Hamiltonian with those obtained by a numerically exact solution of the time-dependent Schrödinger equation. The parametric dependences of the effective exchange Hamiltonian on external magnetic field, barrier gate voltage, and spin-orbit field is determined. This opens the door to designing optimal pulses for high fidelity quantum gates in real InAs nanowire devices.

Quantized conductance and its correlation to the supercurrent in a nanowire connected to superconductors.

Charge Transport in InAs Nanowire Josephson Junctions

High Critical-Current Superconductor-InAs Nanowire-Superconductor Junctions

Supercurrent Through InAs Nanowires with Highly Transparent Superconducting Contacts

Flux-periodic supercurrent oscillations in an Aharonov-Bohm-type nanowire Josephson junction

Switching dynamics in Al/InAs nanowire-based gate-controlled superconducting switch

Regimes of electronic transport in doped InAs nanowire

Topological States and Interplay Between Spin-Orbit and Zeeman Interactions in a Spinful Su-Schrieffer-Heeger Nanowire

Proximity effect and interface transparency in Al/InAs-nanowire/Al diffusive junctions

Transport features of a topological superconducting nanowire with a quantum dot: conductance and noise

Supercurrent and Multiple Andreev Reflections in an InSb Nanowire Josephson Junction

Quantum Interference Effects in Topological Nanowires In a Longitudinal Magnetic Field

Numerical studies of transport and anisotropic exchange interaction in InAs nanowires

Scaling of sub-gap excitations in a superconductor-semiconductor nanowire quantum dot

Spectroscopic Visualization of Hard Quasi-1D Superconductivity Induced in Nanowires Deposited on a Quasi-2D Indium film

Topological Transition of Superconductivity in Dirac Semimetal Nanowire Josephson Junctions

Large Zero Bias Peaks and Dips in a Four-Terminal Thin InAs-Al Nanowire Device

Hybrid Superconductor-Quantum Point Contact Devices using InSb Nanowires

One-Dimensional Quantum Confinement Effect Modulated Thermoelectric Properties in InAs Nanowires

Quantized conductance in split gate superconducting quantum point contacts with InGaAs semiconducting two-dimensional electron systems

Supercurrent through a single transverse mode in nanowire Josephson junctions