Switching dynamics in Al/InAs nanowire-based gate-controlled superconducting switch

Tosson Elalaily,Martin Berke,Ilari Lilja,Alexander Savin,Gergő Fülöp,Lőrinc Kupás,Thomas Kanne,Jesper Nygård,Péter Makk,Pertti Hakonen,Szabolcs Csonka

2024-05-28

Abstract:The observation of the gate-controlled supercurrent (GCS) effect in superconducting nanostructures increased the hopes for realizing a superconducting equivalent of semiconductor field-effect transistors. However, recent works attribute this effect to various leakage-based scenarios, giving rise to a debate on its origin. A proper understanding of the microscopic process underlying the GCS effect and the relevant time scales would be beneficial to evaluate the possible applications. In this work, we observed gate-induced two-level fluctuations between the superconducting state and normal state in Al/InAs nanowires (NWs). Noise correlation measurements show a strong correlation with leakage current fluctuations. The time-domain measurements show that these fluctuations have Poissonian statistics. Our detailed analysis of the leakage current measurements reveals that it is consistent with the stress-induced leakage current (SILC), in which inelastic tunneling with phonon generation is the predominant transport mechanism. Our findings shed light on the microscopic origin of the GCS effect and give deeper insight into the switching dynamics of the superconducting NW under the influence of the strong gate voltage.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

This paper investigates the switching dynamics of gate-controlled superconducting switches based on aluminum/indium arsenide nanowires (Al/InAs nanowires). The scientists observed bistable oscillations induced by gate voltage between the superconducting and normal states in these nanowires. Through noise correlation measurements, they found that these oscillations are highly correlated to the fluctuations in leakage current, exhibiting Poisson statistics. After analyzing the leakage current data, they attributed it to stress-induced leakage current (SILC), where phonon generation is the dominant transport mechanism.

The paper points out that the origin of gate-controlled superconducting effects has been controversial in previous studies, with some attributing it to leakage current scenarios. Therefore, understanding the microscopic processes and their associated time scales of this effect is crucial for evaluating the reliability of devices based on the gate-controlled superconducting effect in various applications. By studying the low-frequency 1/fα noise, the authors provide an in-depth insight into the dynamics of superconducting nanowire switches and propose possible microscopic origins of the gate-controlled superconducting effect.

The experimental section includes a description of the device structure, such as four-probe measurement of nanowires and the influence of side gate voltage. The researchers reveal the connection between the transition between the superconducting and normal states and the dynamic behavior of leakage current through noise correlation and time domain measurements. They also find that as the gate voltage increases, the superconducting switch exhibits slow oscillations between two states, with long time scales.

The discussion section of the paper mentions the relationship between leakage current and gate voltage, as well as the stress-induced leakage current (SILC) phenomenon associated with trap-assisted tunneling in the oxide layer. The authors propose that phonons generated by electron tunneling through trap states may be a key factor in the origin of the gate-controlled superconducting effect.

In conclusion, this paper aims to address the origin and dynamic processes of the gate-controlled superconducting effect. Through detailed experimentation and analysis of aluminum/indium arsenide nanowires, it reveals the roles of leakage current and phonons in this phenomenon, providing new insights for understanding and harnessing this effect.