Abstract:In this article, we demonstrate normally-OFF p-GaN gate high electron mobility transistors (HEMTs) on Si with an ultrahigh breakdown voltage (<inline-formula> <tex-math notation="LaTeX">${V}_{BR}$ </tex-math></inline-formula>) and excellent saturation drain current. Benefiting from the optimized material growth of high-resistivity buffer, effective Al2O3 surface passivation with suppressed OFF-state leakage current, and proper management of the electric field on the p-GaN gate edge, the device with a gate–drain distance of <inline-formula> <tex-math notation="LaTeX">$18.5~\mu \text{m}$ </tex-math></inline-formula> exhibits a <inline-formula> <tex-math notation="LaTeX">${V}_{BR}$ </tex-math></inline-formula> of 1344 V at <inline-formula> <tex-math notation="LaTeX">${I}_{D}$ </tex-math></inline-formula> of <inline-formula> <tex-math notation="LaTeX">$1~\mu \text{A}$ </tex-math></inline-formula>/mm with grounded substrates, the highest among all the reported normally-OFF GaN-on-Si transistors. Well-restored high-density 2-D electron gas and efficient gate modulation enable the device with a high <inline-formula> <tex-math notation="LaTeX">${I}_{DS,max}$ </tex-math></inline-formula> of 450 mA/mm and a low specific ON-resistance of 3.92 <inline-formula> <tex-math notation="LaTeX">$\text{m}\Omega \cdot $ </tex-math></inline-formula>cm2. Moreover, a large threshold voltage of 1.6 V (at <inline-formula> <tex-math notation="LaTeX">${I}_{D}$ </tex-math></inline-formula> of <inline-formula> <tex-math notation="LaTeX">$10~\mu \text{A}$ </tex-math></inline-formula>/mm) and a steep subthreshold slope of 66 mV/dec have been achieved, with negligible threshold voltage shift upon long-term forward gate stress at 150 °C. These results illustrate the great potential of p-GaN gate HEMTs on Si for beyond 600-V applications.

High-performance gate-controlled superconducting switches: large output voltage and reproducibility

Gate control of superconducting current: Mechanisms, parameters and technological potential

Switching dynamics in Al/InAs nanowire-based gate-controlled superconducting switch

Gate-controlled supercurrent effect in dry-etched Dayem bridges of non-centrosymmetric niobium rhenium

Effects of fabrication routes and material parameters on the control of superconducting currents by gate voltage

Gate-controlled superconducting switch in GaSe/NbSe$_2$ van der Waals heterostructure

Large Enhancement of Critical Current in Superconducting Devices by Gate Voltage

Performance of SiC Cascode Switches with Si MOS Gate

Dynamics of Gate-Controlled Superconducting Dayem Bridges

High-energy Electron Local Injection in Top-Gated Metallic Superconductor Switch

Gate Drive Technology Evaluation and Development to Maximize Switching Speed of SiC Discrete Devices and Power Modules in Hard Switching Applications

Large-scale on-chip integration of gate-voltage addressable hybrid superconductor-semiconductor quantum wells field effect nano-switch arrays

Digital logic from high-efficiency superconducting diodes

Full Control of Solid-State Electrolytes for Electrostatic Gating

An incoherent superconducting nanowire phonon detector revealing the controversial gate-controlled superconductivity

Cascaded Logic Gates Based on High-Performance Ambipolar Dual-Gate WSe2 Thin Film Transistors

Double‐Gate MoS2 Field‐Effect Transistors with Full‐Range Tunable Threshold Voltage for Multifunctional Logic Circuits

Complementary Logic with Voltage Zero‐Loss and Nano‐Watt Power Via Configurable MoS2/WSe2 Gate

1300 V Normally-OFF p-GaN Gate HEMTs on Si With High ON-State Drain Current

Gate Robustness and Reliability of P-Gate GaN HEMT Evaluated by a Circuit Method