Large Enhancement of Critical Current in Superconducting Devices by Gate Voltage

Mirko Rocci,Dhavala Suri,Akashdeep Kamra,Gilvania Vilela,Norbert Nemes,Jose Luis Martinez,Mar Garcia Hernandez,Jagadeesh S. Moodera

DOI: https://doi.org/10.1021/acs.nanolett.0c03547

2021-01-28

Abstract:The gate-voltage-induced suppression of critical currents in metallic superconductors observed recently [De Simoni et al., Nat. Nanotechnol. 13, 802 (2018)] has raised crucial questions regarding the nature and mechanism of the electric field effect in these systems. Here, we demonstrate an enhancement of up to 30 % in critical current in the type II superconductor NbN, micro- and nano superconducting bridges, tunable via a back-gate voltage. Our suggested plausible mechanism of this enhancement in critical current based on surface nucleation and pinning of Abrikosov vortices is consistent with expectations and observations for type-II superconductor films with thicknesses comparable to their coherence length. Furthermore we demonstrate infinite electroresistance and a hysteretic resistance dependence on the applied electric field which could lead to logic and memory applications in a superconductors-based low-dissipation digital computing paradigm. Our work thus provides the first demonstration of an electric field enhancement in the superconducting property in metallic superconductors, constituting a crucial step towards understanding of electric field-effects on the fundamental properties of a superconductor and its exploitation for future technologies.

Applied Physics

What problem does this paper attempt to address?

The problem that this paper attempts to solve is that in superconductors with high carrier density, it is considered impossible to significantly control their properties by applying an electric field because the electric field will be screened on the atomic scale. However, the authors have demonstrated that in micron - and nano - scale superconducting bridges of NbN (niobium nitride), an enhancement of the critical current of up to 30% can be achieved by the back - gate voltage. In addition, they have also observed an infinite resistance and resistance hysteresis related to the applied electric field. These findings are crucial for understanding the influence of the electric field on the fundamental properties of superconductors and for their use in logic and storage applications in the low - dissipation digital computing paradigm based on superconductors.

Specifically, the paper mainly focuses on the following aspects:
1. **Enhancement of the critical current**: The researchers have shown how to enhance the critical current of NbN superconducting bridges by applying a back - gate voltage, with a maximum enhancement of 30%. This indicates that even in superconducting materials with high carrier density, the electric - field effect can still significantly affect their performance.
2. **Infinite resistance and resistance hysteresis caused by the electric field**: In addition to the enhancement of the critical current, the research has also discovered the infinite resistance change and resistance hysteresis under the control of the electric field. These phenomena have potential application value for developing low - power - consumption logic and storage elements based on superconductors.
3. **Mechanism discussion**: The authors propose a possible mechanism, that is, the enhancement of surface - pinned Abrikosov vortices, which is consistent with the expectations and observations of type - II superconducting thin films. This mechanism explains why the critical current changes with the gate voltage while the critical temperature remains unchanged.

In conclusion, through experimental and theoretical analysis, this paper reveals the action mechanism of the electric field in superconductors with high carrier density and shows its potential in practical applications.