On the origin of the controversial electrostatic field effect in superconductors

Ilia Golokolenov,Andrew Guthrie,Sergey Kafanov,Yuri Pashkin,Viktor Tsepelin

DOI: https://doi.org/10.1038/s41467-021-22998-0

2020-09-02

Abstract:In semiconductor electronics, the field-effect refers to the control of electrical conductivity in nanoscale devices, which underpins the field-effect transistor, one of the cornerstones of present-day semiconductor technology. The effect is enabled by the penetration of the electric field far into a weakly doped semiconductor, whose charge density is not sufficient to screen the field. On the contrary, the charge density in metals and superconductors is so large that the field decays exponentially from the surface and can penetrate only a short distance into the material. Hence, the field-effect should not exist in such materials. Nonetheless, recent publications have reported observation of the field-effect in superconductors and proximised normal metal nanodevices. The effect was discovered in gated nanoscale superconducting constrictions as a suppression of the critical current under the application of intense electric field and interpreted in terms of an electric-field induced perturbation propagating inside the superconducting film. Here we show that ours, and previously reported observations, governed by the overheating of the constriction, without recourse to novel physics. The origin of the overheating is a leakage current between the gate and the constriction, which perfectly follows the Fowler-Nordheim model of electron field emission from a metal electrode.c`

Mesoscale and Nanoscale Physics,Superconductivity

What problem does this paper attempt to address?

The problem that this paper attempts to solve is about the origin of the controversial electrostatic field effect in superconductors. Specifically, the authors are concerned with whether the critical current suppression phenomenon in superconducting nanostructures under the action of a strong electric field is really caused by the electrostatic field effect or whether other mechanisms are at work.

### Background of the paper and problem description

In semiconductor electronics, the field effect refers to the regulation of current by controlling the conductivity in nanoscale devices, which is of great significance in modern semiconductor technology. However, in metals and superconductors, due to their high carrier density, the electric field can usually penetrate only a very short distance on the surface, so theoretically there should be no field effect.

However, some recent studies have reported the observation of field effects in superconductors and nanodevices close to normal metals. These studies found that when a strong electric field is applied, the critical current of the superconducting junction will be suppressed, and this is explained as the perturbation induced by the electric field propagating into the superconducting thin film. This phenomenon has triggered extensive discussion and controversy.

### Research objectives

By conducting a detailed study of similar experimental setups, the authors aim to verify whether these reported field effects do exist or whether other mechanisms can explain these phenomena. They pay special attention to the following points:

1. **Mechanism of critical current suppression**: Confirm whether it is caused by the electric field effect or other reasons.
2. **Explanation of overheating phenomenon**: Explore whether there is an overheating phenomenon and analyze its impact on the experimental results.
3. **Role of leakage current**: Study the influence of leakage current on the system behavior, especially its correlation with the observed phenomena.

### Main conclusions

Through the analysis of a series of experimental data, the authors conclude that the previously reported critical current suppression phenomenon in superconducting nanostructures is not caused by the electrostatic field effect, but by the local overheating of the nanostructures. Specifically, this overheating is caused by the leakage current between the gate and the nanostructures, and it conforms to the electron field emission mechanism of the Fowler - Nordheim model.

### Formula presentation

The key formulas involved in the paper include:

- Change in resonant frequency:
\[
\omega \approx \frac{1}{\sqrt{L_g C}} \left(1 - \frac{1}{2} \frac{L_J}{L_g}\right)
\]
- Internal quality factor:
\[
\omega \approx \frac{\omega L_g}{R} \left(1 + \frac{1}{2} \frac{L_J}{L_g}\right)
\]
- Fowler - Nordheim model of leakage current:
\[
I_L = \alpha V_G^2 \exp\left(\frac{\beta}{V_G}\right)
\]

These formulas help explain the phenomena observed in the experiment and support the authors' conclusions.

In summary, the main purpose of this paper is to clarify the real cause of the controversial electrostatic field effect in superconductors and provide detailed experimental evidence and theoretical analysis to support their views.