Abstract:Heterogeneous integration of diverse materials structures is critical to the scaling of electronic and photonic integrated circuits. For a model system of Ge-on-Si, we experimentally examine the roles of lattice misfit and thermal expansion misfit in determining the residual strain in as-grown and annealed heteroepitaxial films. We present data for Ge-on-Si growth from 400 to 730 °C followed by heat treatment from 500–900 °C. We show that strain fluctuations of 5.02% enable misfit dislocation formation, and we propose a comprehensive model for the conversion of compressive misfit strain to tensile elastic strain. The model is expressed in terms of three regimes: (1) misfit control for the low temperature growth regime at 400 °C; (2) point defect control via annealing in the point defect recovery regime at 500–650 °C; and (3) thermal expansion control for growth or anneal at T > 650 °C in the dislocation recovery regime. Growth from 400 to 730 °C exhibits near complete misfit strain relief by misfit dislocations leaving a consistent residual compressive strain of 0.09%. Growth at 400 °C followed by post growth heat treatment at 600 °C results in vertical threading dislocation density reduction via a point defect-mediated climb mechanism that gives minimal strain relief. Anneal above 650 °C promotes strain relief by dislocation glide. Temperature excursions at T > 730 °C followed by cooling to room temperature yield plastic strain in the Ge film that cannot be further relieved by thermal expansion misfit accommodation. Growth at 400–730 °C retains a residual compressive strain that represents the nucleation threshold for misfit dislocations.

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Different Strain Relaxation Mechanisms in Strained Si/Si1−xGex/Si Heterostructures by High Dose B+ and BF2+ Doping

Quantitative Strain Characterization of SiGe Heterostructures by High-Resolution Transmission Electron Microscopy

Origin of residual strain in heteroepitaxial films

Investigation of Strain-Relaxed SiGe Thin Film Grown on Ion-Implanted Si Compliant Substrate

A study on the strain stability of Si/SiGe layer structure in a heterojunction bipolar transistor during thermal processing

Evolution of secondary defects in arsenic implanted Si

Composition and Strain Measurements of Ge(Si)/Si(001) Islands by HRTEM.

Strain Relaxation and Misfit Dislocation in SiGe Epilayers Grown in Micron Size Windows by MBE

Effect of Stresses on Defect Nucleation in Si<sub>1−.x</sub>Ge<sub>x</sub>/Si Heteroepitaxial Systems

Strains in Si Substrate Induced by Formation of Ge Islands

Strain Relaxation in Heteroepitaxial Si1-xGex Films via Surface Roughening Processes

Growth Mechanisms in Thin Film Epitaxy of Si/Sige from Hydrides

Strain Relaxation in Heteroepitaxial Si<sub>1-x</sub>Ge<sub>x</sub> Films via Surface Roughening Processes

Studies of Morphological Instability and Dislocation Formation in Heteroepitaxial Si1−xGex Thin Films Via Controlled Annealing Experiments

The Property of Si／SiGe／Si Heterostructure During Thermal Budget Characterized by HRXRD

Effect of Stresses on Defect Nucleation in Si1-xGex/Si Heteroepitaxial Systems

Plasma Hydrogenation of Strain-Relaxed SiGe∕Si Heterostructure for Layer Transfer

Study of strain distribution in GeSi/Si strained heterostructure

Strain Relaxation and Defect Formation in Heteroepitaxial Si1−xGex Films Via Surface Roughening Induced by Controlled Annealing Experiments

Lattice Strains and Composition of Self-Organized Ge Dots Grown on Si(001)