Abstract:In this paper, a single crystalline GaN grown on Si(111) is reported using a GaN buffer layer by a simple vacuum reaction method. Scanning electron microscopy (SEM), X-ray diffraction (XRD), transmission electron microscopy (TEM), photoluminescence measurement (PL), Hall measurement and secondary ion mass spectroscopy (SIMS) results indicate that the single crystalline hexagonal GaN was successfully grown on the microcrystalline GaN buffer layers on Si(111) substrate. The surface of the GaN films is flat and crack-free. A pronounced GaN (0002) peak appears in the XRD pattern. The full width at half-maximum (FWHM) of the double-crystal X-ray rocking curve (DCXRC) for (0002) diffraction from the GaN epilayer is 30 arcmin. The TEM reveals that a 10 nm GaN buffer layer in the microcrystalline state exists between the Si substrate and the epilayer, which dissipates most of the stress energy. The PL spectrum shows that the GaN epilayer emits light at the wavelength of 365 nm with an FWHM of 8 nm (74.6 meV). The unintentionally doped films were n-type with a carrier concentration of 1.76 × 1018/cm3 and an electron mobility of 142 cm3/Vs. The growth technique described was simple but very powerful for growing single crystalline GaN films on Si substrates.

Growth and Characterization of Silicon Molecular Beam Epilayers on GaP (111) Substrates

EPITAXIAL GROWTH OF (0001)ORIENTED 6H-Sic FILMS ON Si(111) SUBSTRATE BY ORGANIC SOL-GEL FILM ANNEALING

Synthesis and Characterization of Heteroepitaxial Gan Films on Si(111)

Heteroepitaxial Growth of Ge Films on Si Substrates by Molecular-Beam Epitaxy

Investigation Of Preparation And Properties Of Epitaxial Growth Gan Film On Si(111) Substrate

Molecular Beam Epitaxy and Micro-Structural Characterizations for PbSe Single Crystal Films

Study of Si and Ge growth on Si(100) surface

Epitaxial synthesis of single-domain gallium phosphide on silicon

Epitaxial growth of Si(111)/Er2O3 (111) structure on Si(111) by molecular beam epitaxy

Preparation and characterization of GaP/Si heterojunction

Characterization and growth of germanium-silicon epitaxial layers by UHV/CVD

Conformal growth of GaP on high aspect ratio Si structured surface via plasma-enhanced atomic layer deposition

Molecular-Beam Epitaxy of Gaas on Si-On-Insulator

GaN growth on Si and Si-SiO2-Si compliant substrates

Investigation of preparation and properties of epitaxial growth GaN film on Si(1 1 1) substrate

Molecular beam epitaxy growth of Ge on Si(111) substrates covered by a SiO2 mask

Epitaxial growth of GaN film on Si substrate

Study of Si1-xGEx epitaxy growth on Si(100) and Si(111)

Gan Layers on Si (111) from Nanocolumns to Nanorods by Plasma-Assisted Molecular Beam Epitaxy

Hexagonal GaN Epitaxial Growth on Si(111) by a Vacuum Reaction Method

The growth of Si overlayers on Er2O3 (111)/Si (111) by solid phase epitaxy