Abstract:Large area epitaxy of two-dimensional (2D) layered materials with high material quality is a crucial step in realizing novel device applications based on 2D materials. In this work, we report high-quality, crystalline, large-area gallium selenide (GaSe) films grown on bulk substrates such as c-plane sapphire and gallium nitride (GaN) using a valved cracker source for Se. (002)-oriented GaSe with random in-plane orientation of domains was grown on sapphire and GaN substrates at a substrate temperature of 350-450 C with complete surface coverage and smooth surface morphology. Higher growth temperature (575 C) resulted in the formation of single-crystalline {\epsilon}-GaSe triangular domains with six-fold symmetry confirmed by in-situ reflection high electron energy diffraction (RHEED) and off-axis x-ray diffraction (XRD). A two-step growth method involving high temperature nucleation of single crystalline domains and low temperature growth to enhance coalescence was adopted to obtain continuous (002)-oriented GaSe with an epitaxial relationship with the substrate. While six-fold symmetry was maintained in the two step growth, {\beta}-GaSe phase was observed in addition to the dominant {\epsilon}-GaSe in cross-sectional scanning transmission electron microscopy images. This work demonstrates the potential of growing high quality 2D-layered materials using molecular beam epitaxy and can be extended to the growth of other transition metal chalcogenides.

Epitaxial synthesis of single-domain gallium phosphide on silicon

Synthesis and Characterization of Heteroepitaxial Gan Films on Si(111)

Growth and Characterization of Silicon Molecular Beam Epilayers on GaP (111) Substrates

Conformal growth of GaP on high aspect ratio Si structured surface via plasma-enhanced atomic layer deposition

Selective Growth of GaP Crystals on CMOS-Compatible Si Nanotip Wafers by Gas Source Molecular Beam Epitaxy

Epitaxial growth of antiphase boundary free GaAs layer on 300 mm Si(001) substrate by metalorganic chemical vapour deposition with high mobility

Molecular Beam Epitaxy of 2D-layered Gallium Selenide on GaN substrates

Molecular-Beam Epitaxy of Gaas on Si-On-Insulator

Single Domain Bi2Se3 Films Grown on InP(111)A by Molecular-Beam Epitaxy

Investigation Of Preparation And Properties Of Epitaxial Growth Gan Film On Si(111) Substrate

Phase Transition Induced Vertical Alignment of Ultrathin Gallium Phosphide Nanowire Arrays on Silicon by Chemical Beam Epitaxy

Epitaxial growth of high-quality GaAs on Si(001) using ultrathin buffer layers

Non-equilibrium epitaxy of metastable polymorphs of ultrawide-bandgap gallium oxide

GaAs/Ge crystals grown on Si substrates patterned down to the micron scale

A new approach to epitaxially grow high-quality GaN films on Si substrates: the combination of MBE and PLD

Particle-Catalyst-Free Vapor-Liquid-Solid Growth of Millimeter-Scale Crystalline Compound Semiconductors on Nonepitaxial Substrates

Epitaxial growth of GaN film on Si substrate

Hexagonal GaN Epitaxial Growth on Si(111) by a Vacuum Reaction Method

Epitaxial Growth Of Wurtzite Gan On Si(111) By A Vacuum Reactive Evaporation

Epitaxial GaSb films directly grown on on-axis Si(001) with low defect density by MBE

Van der Waals epitaxial growth of few layers WSe2 on GaP(111)B