Molecular-dynamics Simulation of Ge Film Growth by Cluster Deposition

HW Lu,JY Feng
DOI: https://doi.org/10.1088/0965-0393/8/4/315
IF: 2.421
2000-01-01
Modelling and Simulation in Materials Science and Engineering
Abstract:Ge thin-film growth from cluster beams has been investigated with molecular-dynamics simulations utilizing the Stillinger-Weber two- and three-body interaction potentials. The spreading of Ge-atom clusters and the structure of grown films have been studied as a function of incident cluster velocity. Higher surface diffusion and spreading of the deposited clusters were achieved with a moderate cluster velocity. The epitaxial Ge (111) growth was obtained under this cluster velocity.
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