Direct Structural Evidences of Mn11Ge8 and Mn5Ge2 Clusters in Ge0.96Mn0.04 Thin Films

Yong Wang,Jin Zou,Zuoming Zhao,Xinhai Han,Xiaoyu Zhou,Kang L. Wang
DOI: https://doi.org/10.1063/1.2884527
IF: 4
2008-01-01
Applied Physics Letters
Abstract:Mn-rich clusters in Mn-doped Ge thin films epitaxially grown on Ge (001) have been investigated by various transmission electron microscopy techniques. Both the mysterious Mn11Ge8 and the hexagonal Mn5Ge2 (a=0.72nm and c=1.3nm) clusters were confirmed to coexist in the thicker Ge0.96Mn0.04 film (80nm). Their possible formation mechanism is attributed to the existence of ordered stacking faults. The fact that no Mn-rich clusters found in thinner films (<=40nm) suggests that, for a given Mn concentration and growth/annealing condition, a critical thickness exists for the formation of Mn-rich clusters.
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