A Method for Fabricating CMOS Back-End-of-Line-Compatible Solid-State Nanopore Devices

Mohamed Yassine Bouhamidi,Chunhui Dai,Michel Stephan,Joyeeta Nag,Justin Kinney,Lei Wan,Matthew Waugh,Kyle Briggs,Jordan Katine,Vincent Tabard-Cossa,Daniel Bedau

2024-11-26

Abstract:Solid-state nanopores, nm-sized holes in thin, freestanding membranes, are powerful single-molecule sensors capable of interrogating a wide range of target analytes, from small molecules to large polymers. Interestingly, due to their high spatial resolution, nanopores can also identify tags on long polymers, making them an attractive option as the reading element for molecular information storage strategies. To fully leverage the compact and robust nature of solid-state nanopores, however, they will need to be packaged in a highly parallelized manner with on-chip electronic signal processing capabilities to rapidly and accurately handle the data generated. Additionally, the membrane itself must have specific physical, chemical, and electrical properties to ensure sufficient signal-to-noise ratios are achieved, with the traditional membrane material being SiNX . Unfortunately, the typical method of deposition, low-pressure vapour deposition, requires temperatures beyond the thermal budget of CMOS back-end-of-line integration processes, limiting the potential to generate an on-chip solution. To this end, we explore various lower-temperature deposition techniques that are BEOL-compatible to generate SiNx membranes for solid-state nanopore use, and successfully demonstrate the ability for these alternative methods to generate low-noise nanopores that are capable of performing single-molecule experiments.

Applied Physics,Materials Science,Biological Physics

What problem does this paper attempt to address?

### What problem does this paper attempt to solve?

This paper aims to solve the problem of how to compatibly integrate solid - state nanopores (ssNPs) with the Complementary Metal - Oxide - Semiconductor (CMOS) Back - End - of - Line (BEOL) process. Specifically, the paper focuses on how to manufacture solid - state nanopore devices suitable for large - scale electronic integration under the premise of meeting the low - temperature requirements of the BEOL process.

#### Main problems include:

1. **The need for high - throughput and rapid data processing**:
- As a powerful single - molecule sensor, solid - state nanopores can detect various target analytes from small molecules to large polymers and have high spatial resolution. In order to fully utilize their compactness and robustness, they need to be packaged in a highly parallel manner and combined with on - chip electronic signal processing capabilities in order to quickly and accurately process the generated data.

2. **Physical, chemical and electrical properties of membrane materials**:
- Solid - state nanopores are usually made of silicon nitride (SiNₓ) thin films, and these films must have specific physical, chemical and electrical properties to ensure sufficient signal - to - noise ratio. Although the traditional low - pressure chemical vapor deposition (LPCVD) method can prepare high - quality SiNₓ films, its deposition temperature (700°C - 1000°C) exceeds the thermal budget (<400°C) of the CMOS BEOL process, limiting its application in on - chip solutions.

3. **Search for low - temperature deposition techniques**:
- To solve the above problems, the paper explored several low - temperature deposition techniques that can prepare SiNₓ films at temperatures in line with the BEOL process requirements. Through these alternative methods, low - noise solid - state nanopores were successfully prepared, enabling single - molecule experiments.

#### Specific research contents:
- **Ion Beam Deposition (IBD)**: A physical vapor deposition (PVD) technique that can prepare SiNₓ films at room temperature, with good adhesion, a dense structure and fewer defects.
- **Plasma - Enhanced Atomic Layer Deposition (PEALD) and Inductively Coupled Plasma Chemical Vapor Deposition (ICPCVD)**: These two methods can operate at relatively low temperatures (about 200 - 400°C), but may introduce carbon and hydrogen impurities and affect the film quality.
- **Annealing treatment**: Improve the performance of SiNₓ films through thermal annealing, reduce the stress in the films, and help form more stable and lower - noise solid - state nanopores.

In conclusion, through exploring and optimizing low - temperature deposition techniques and annealing treatment, this paper successfully realized the preparation of solid - state nanopore devices compatible with the CMOS BEOL process, laying the foundation for high - throughput sequencing, especially for Molecular Information Storage (MIST) applications.