Abstract:The primary mechanism of operation of almost all transistors today relies on electric-field effect in a semiconducting channel to tune its conductivity from the conducting 'on'-state to a non-conducting 'off'-state. As transistors continue to scale down to increase computational performance, physical limitations from nanoscale field-effect operation begin to cause undesirable current leakage that is detrimental to the continued advancement of computing. Using a fundamentally different mechanism of operation, we show that through nanoscale strain engineering with thin films and ferroelectrics (FEs) the transition metal dichalcogenide (TMDC) MoTe$_2$ can be reversibly switched with electric-field induced strain between the 1T'-MoTe$_2$ (semimetallic) phase to a semiconducting MoTe$_2$ phase in a field effect transistor geometry. This alternative mechanism for transistor switching sidesteps all the static and dynamic power consumption problems in conventional field-effect transistors (FETs). Using strain, we achieve large non-volatile changes in channel conductivity (G$_{on}$/G$_{off}$~10$^7$ vs. G$_{on}$/G$_{off}$~0.04 in the control device) at room temperature. Ferroelectric devices offer the potential to reach sub-ns nonvolatile strain switching at the attojoule/bit level, having immediate applications in ultra-fast low-power non-volatile logic and memory while also transforming the landscape of computational architectures since conventional power, speed, and volatility considerations for microelectronics may no longer exist.

Room Temperature Molecular Single-Electron Transistor

A Silicon Cluster Based Single Electron Transistor with Potential Room-Temperature Switching

Room-temperature transistor based on a single carbon nanotube

Room temperature operational single electron transistor on the macroscopic surface of hydrogenated diamond like carbon

Single‐Molecule Electrochemical Transistors

In Situ Cds Nanocluster Formation On Scanning Tunneling Microscopy Tips For Reliable Single-Electron Tunneling At Room Temperature

Reversible Single-Molecule Switching in an Ordered Monolayer Molecular Dipole Array.

Large Gate Modulation In The Current Of A Room Temperature Single Molecule Transistor

Mechanically-adjustable and electrically-gated single-molecule transistors

Room-temperature Smectic Liquid Crystal Monolayers for Field-effect Transistors

Field-Effect Modulation of the Conductance of Single Molecules

Reversible switching of a single-dipole molecule imbedded in two-dimensional hydrogen-bonded binary molecular networks

Alkanethiol-based single-molecule transistors

Quantum Interference Mediated Vertical Molecular Tunneling Transistors

Transistors with Chemically Synthesized Layered Semiconductor WS2 Exhibiting 105 Room Temperature Modulation and Ambipolar Behavior

Strain-Based Room-Temperature Non-Volatile MoTe$_2$ Ferroelectric Phase Change Transistor

Chemoresponsive Monolayer Transistors.

Room Temperature Single Electron Tunneling in Nanoparticle-STM Tip Assemblies

Atomic-scale Control of Electron Transport Through Single Molecules.

Single-ZnO-Nanobelt-Based Single-Electron Transistors

CMOS-compatible fabrication of room-temperature single-electron devices