Abstract:Using graphene as electrodes provides an opportunity for fabricating stable single-molecule field-effect transistors (FETs) operating at room temperature. However, the role of the unique graphene band structure in charge transport of single-molecule devices is still not clear. Here we report the Dirac-cone induced electrostatic gating effects in single-molecule FETs with graphene electrodes and a solid-state local bottom gate. With the highest occupied molecular orbital (HOMO) as the dominating conduction channel and the graphene leads remaining intrinsic at zero gate voltage, electrostatic gating on the HOMO and the density of states of graphene at the negative gate polarity reinforces each other, resulting in an enhanced conductance modulation. In contrast, gating effects on the HOMO and the graphene states at the positive gate polarity are opposite. Depending on the gating efficiencies, the conductance can decrease, increase or remain almost unchanged when a more positive gate voltage is applied. Our observations can be well understood by a modified single-level model taking into account the linear dispersion of graphene near the Dirac point. Single-molecule FETs with Dirac-cone enhanced gating have shown high performances, with the modulation of a wide range of current over one order of magnitude. Our studies highlight the advantages of using graphene as an electrode material for molecular devices and pave the way for single-molecule FETs toward circuitry applications.

Large Gate Modulation In The Current Of A Room Temperature Single Molecule Transistor

Field-Effect Modulation of the Conductance of Single Molecules

Gating the Rectifying Direction of Tunneling Current through Single-Molecule Junctions

First-Principles Study Of Electrochemical Gate-Controlled Conductance In Molecular Junctions

Dirac-cone Induced Gating Enhancement in Single-Molecule Field-Effect Transistors

Single‐Molecule Electrochemical Transistors

Carbon Nanotube Lateral Field Emission Device with Embedded Field Effect Transistor

Ambipolar Transport in an Electrochemically Gated Single-Molecule Field-Effect Transistor.

Mechanically Gated Transistor.

Retracted: Field-Effect Modulation Of The Conductance Of Single Molecules (Retracted Article. See Vol 296, Pg 1400, 2002)

Prototypical Single-Molecule Transistors with Supramolecular Gates: Varying Dipole Orientation

A Silicon Cluster Based Single Electron Transistor with Potential Room-Temperature Switching

The Difficulty of Gate Control in Molecular Transistors

Controlling Charge Transport in Single Molecules Using Electrochemical Gate

Effective Gating in Single-Molecule Junctions through Fano Resonances

Thermally Activated Electron Transport in Single Redox Molecules

Large current modulation in exfoliated-graphene/MoS2/metal vertical heterostructures

Self-consistent study of single molecular transistor modulated by transverse field.

Mott transistor with giant switching ratio at room temperature and its emulation of artificial synapses

Gate-controlled reversible rectifying behaviour in tunnel contacted atomically-thin MoS$_{2}$ transistor

Gate-Switchable Molecular Diffusion on a Graphene Field-Effect Transistor