Two-dimensional quasi-freestanding molecular crystals for high-performance organic field-effect transistors
Daowei He,Yuhan Zhang,Qisheng Wu,Rui Xu,Haiyan Nan,Junfang Liu,Jianjun Yao,Zilu Wang,Shijun Yuan,Yun Li,Yi Shi,Jinlan Wang,Zhenhua Ni,Lin He,Feng Miao,Fengqi Song,Hangxun Xu,K. Watanabe,T. Taniguchi,Jian-Bin Xu,Xinran Wang
DOI: https://doi.org/10.1038/ncomms6162
IF: 16.6
2014-01-01
Nature Communications
Abstract:Two-dimensional atomic crystals are extensively studied in recent years due to their exciting physics and device applications. However, a molecular counterpart, with scalable processability and competitive device performance, is still challenging. Here, we demonstrate that high-quality few-layer dioctylbenzothienobenzothiophene molecular crystals can be grown on graphene or boron nitride substrate via van der Waals epitaxy, with precisely controlled thickness down to monolayer, large-area single crystal, low process temperature and patterning capability. The crystalline layers are atomically smooth and effectively decoupled from the substrate due to weak van der Waals interactions, affording a pristine interface for high-performance organic transistors. As a result, monolayer dioctylbenzothienobenzothiophene molecular crystal field-effect transistors on boron nitride show record-high carrier mobility up to 10 cm 2 V −1 s −1 and aggressively scaled saturation voltage ~1 V. Our work unveils an exciting new class of two-dimensional molecular materials for electronic and optoelectronic applications.