Abstract:The successful commercialization of organic field‐effect transistors (OFETs) for advanced integrated organic electronics requires reducing device sizes, which inevitably clashes with the constraints imposed by the contact effects. Herein, it is demonstrated that the contact resistance in OFETs based on monolayer organic semiconductors is extremely low, especially at mild biasing conditions. The contributions of the access resistance and the metal–organic interface resistance are successfully disentangled for the first time. It is shown that, contrary to the conventional view, the contact resistance of monolayer OFETs in the saturation regime exhibits a very weak dependence on the source electrode length. In the monolayer OFETs based on 2,9‐didecyldinaphtho[2,3‐b:2’,3’‐f]thieno[3,2‐b]thiophene (C10‐DNTT), a gate‐voltage‐independent access resistivity (2.2 × 10−2 Ω cm2) at VDS = −1 mV is obtained, while the interfacial metal–organic Schottky contact resistance is found to be negligible. The depletion of a diode associated with the metal–organic interface expands with increasing VDS and eventually bottlenecks the device performance. Finally, how to overcome such a carrier depletion contact resistance bottleneck and achieve OFETs with outstanding performance are shown. These findings pave the way toward sophisticated organic electronic applications based on the use of monolayer OFETs. Herein, the contact resistance is studied in monolayer organic transistors with van der Waals electrodes. The contact resistivity reveals no gate‐dependent behavior under low drain‐source bias while the reverse diode in the metal–organic interface becomes dominated when drain‐source bias increases. Herein, a deep insight into the contact resistance of the monolayer organic transistors is provided.

Realizing low-voltage operating crystalline monolayer organic field-effect transistors with a low contact resistance

Crystallized Monolayer Semiconductor for Ohmic Contact Resistance, High Intrinsic Gain, and High Current Density

Realization of Ohmic-contact and velocity saturation in organic field-effect transistors by crystallized monolayer

Ultrahigh Mobility and Efficient Charge Injection in Monolayer Organic Thin-Film Transistors on Boron Nitride.

Ultralow contact resistance in organic transistors via orbital hybridization

The Origin of Low Contact Resistance in Monolayer Organic Field‐Effect Transistors with van der Waals Electrodes

Effect of contact resistance in organic field‐effect transistors

Organic crystalline monolayers for ideal behaviours in organic field-effect transistors

Interfacial Flat-Lying Molecular Monolayers for Performance Enhancement in Organic Field-Effect Transistors

Low-voltage, High-performance Organic Field-Effect Transistors Based on 2D Crystalline Molecular Semiconductors

Low Contact Resistance Organic Single-Crystal Transistors with Band-Like Transport Based on 2,6-Bis-Phenylethynyl-Anthracene

Modulating Contact Properties by Molecular Layers in Organic Thin‐film Transistors

Liquid Crystal-Like Active Layer for High-Performance Organic Field-Effect Transistors

Molecular layer modulation of two-dimensional organic ferroelectric transistors

Directly probing the charge transport in initial molecular layers of organic polycrystalline field effect transistors

Oxygen-Induced Barrier Lowering for High-Performance Organic Field-Effect Transistors

Solution-processed top-contact electrodes strategy for organic crystalline field-effect transistor arrays

Low-Voltage, High Performance Flexible Organic Field Effect Transistors Based on Ultrathin Single Crystal Microribbons.

Two-dimensional quasi-freestanding molecular crystals for high-performance organic field-effect transistors

Reducing Contact Resistance in Organic Field-Effect Transistors: A Comprehensive Comparison between 2D and Microrod Single Crystals

Enhanced performance of field-effect transistors based on C 60 single crystals with conjugated polyelectrolyte