Abstract:The modification of C-60 nano-interlayers on the organic field-effect transistors (OFETs) based on 2,7-diocty[1] benzothieno-[3,2-b]benzothiophene (C8-BTBT)/SiO2 was addressed at both the electronic structure and device level. It is observed that a band bending occurs in C8-BTBT layer with the insertion of C-60, which induces a strong hole accumulation at the interface region, facilitating the formation of high concentration conducting channel when the interface is incorporated into OFETs. The strong acceptor C-60 may cause charge transfer from the trap states in C8-BTBT, resulting in a field-effect operation with decreased threshold voltage. However, the increasing disorder in C8-BTBT induced by the C-60 nano-interlayer may reduce the hole mobility at the C8-BTBT/SiO2 interface region and change the growth model of C8-BTBT. In addition, as confirmed by the transfer characteristic of the OFETs, the thin C-60 insertion layer isn't continuous enough to induce an ambipolar transport behavior despite its high mobility. The competition between the two opposite effects results in compromised performance in such OFETs. The device performance parameters deteriorate generally with increasing the C-60 nano-interlayer thickness. So, it is inferred that the C-60 interlayer alone cannot improve the performance of the C8-BTBT/SiO2-based OFETs without further optimization. Importantly, the device performance exhibits an abnormal improvement with a 6 nm C-60 interlayer, which might be ascribed to a higher energy level shift of C8BTBT caused by a quasi-continuous C-60 film at this thickness.

Enhanced performance of field-effect transistors based on C 60 single crystals with conjugated polyelectrolyte

Influence of Polymer Dielectrics on C60-based Field-Effect Transistors

A striking performance improvement of fullerene n-channel field-effect transistors via synergistic interfacial modifications

A High Mobility C-60 Field-Effect Transistor with an Ultrathin Pentacene Passivation Layer and Bathophenanthroline/Metal Bilayer Electrodes

Wafer‐Scale Growth of Aligned C 60 Single Crystals via Solution‐Phase Epitaxy for High‐Performance Transistors

Solution-grown aligned C60 single-crystals for field-effect transistors

Mobility Improvement in C$_{60}$-Based Field-Effect Transistors Using LiF/Ag Source/Drain Electrodes

Solution-processed n-type fullerene field-effect transistors prepared using CVD-grown graphene electrodes: improving performance with thermal annealing

Mobility Improvement in C60-Based Field-Effect Transistors Using LiF/Ag Source/Drain Electrodes

Mobility Improvement in C<sub>60</sub>-Based Field-Effect Transistors Using LiF/Ag Source/Drain Electrodes

Direct Solution Deposition of Large-Area Non-Solvated Fullerene Single-Crystal Films for High-Performance n-Type Field-Effect Transistors

High‐Performance Organic Field‐Effect Transistors from Organic Single‐Crystal Microribbons Formed by a Solution Process

Influence of Low Temperature Annealed Ultrathin CYTOP Buffer Layer on the Performance of Single Crystal Organic Field-Effect Transistors

Spin-Coated Crystalline Molecular Monolayers for Performance Enhancement in Organic Field-Effect Transistors

Effect of organic buffer layers on the performance of n-type organic field-effect transistor based on C 60 active layer

Modification of C60 Nano-Interlayers on Organic Field-Effect Transistors Based on 2,7-Diocty[1]benzothieno-[3,2-b]benzothiophene (C8-Btbt)/sio2

Polymer single crystal dielectrics for organic field-effect transistors

Enhancement of Memory Properties of Pentacene Field-Effect Transistor by the Reconstruction of an Inner Vertical Electric Field with an N-Type Semiconductor Interlayer.

Lowering the Contact Barriers of 2D Organic F<sub>16</sub>CuPc Field-Effect Transistors by Introducing Van der Waals Contacts

Suppressing Interface Strain for Eliminating Double-Slope Behaviors: Towards Ideal Conformable Polymer Field-Effect Transistors.

Lowering the Contact Barriers of 2D Organic F 16 CuPc Field‐Effect Transistors by Introducing Van der Waals Contacts