Micromechanical electrometry of single-electron transistor island charge

M.P. Blencowe,Y. Zhang

DOI: https://doi.org/10.1016/S0921-4526%2802%2900529-X

2001-09-12

Abstract:We consider the possibility of using a micromechanical gate electrode located just above the island of a single-electron transistor to measure directly the fluctuating island charge due to tunnelling electrons.

Mesoscale and Nanoscale Physics,Quantum Physics

What problem does this paper attempt to address?

Coulomb blockade in a nanoscale phosphorus-in-silicon island

F. E. Hudson,A. J. Ferguson,C. Yang,D. N. Jamieson,A. S. Dzurak,R. G. Clark

DOI: https://doi.org/10.48550/arXiv.cond-mat/0510488

2006-02-21

Abstract:We study the low temperature electrical transport behaviour of a silicon single electron transistor. The island and leads are defined by patterned phosphorus doped regions achieved by ion implantation through a polymer resist mask. In the device a 50 nm diameter island, containing ~600 donors and having a metallic density of states, is separated from source and drain leads by undoped silicon tunnel barriers. The central island and tunnel barriers are covered by a surface gate in a field effect transistor geometry allowing the coupling between the leads and island to be controlled. Coulomb blockade due to charging of the doped island is measured, the oscillation period is observed to be constant while the charging energy is dependent on the surface gate voltage. We discuss the possibilities of approaching the few electron regime in these structures, with the aim of observing and manipulating discrete quantum mechanical states.

Mesoscale and Nanoscale Physics
A Silicon Cluster Based Single Electron Transistor with Potential Room-Temperature Switching

Zhanbin Bai,Xiangkai Liu,Zhen Lian,Kangkang Zhang,Guanghou Wang,Su-Fei Shi,Xiaodong Pi,Fengqi Song

DOI: https://doi.org/10.1088/0256-307x/35/3/037301

2018-01-01

Abstract:We demonstrate the fabrication of a single electron transistor device based on a single ultra-small silicon quantum dot connected to a gold break junction with a nanometer scale separation. The gold break junction is created through a controllable electromigration process and the individual silicon quantum dot in the junction is determined to be a Si_170 cluster. Differential conductance as a function of the bias and gate voltage clearly shows the Coulomb diamond which confirms that the transport is dominated by a single silicon quantum dot. It is found that the charging energy can be as large as 300meV, which is a result of the large capacitance of a small silicon quantum dot (1.8 nm). This large Coulomb interaction can potentially enable a single electron transistor to work at room temperature. The level spacing of the excited state can be as large as 10 meV, which enables us to manipulate individual spin via an external magnetic field. The resulting Zeeman splitting is measured and the lande factor of 2.3 is obtained, suggesting relatively weak electron-electron interaction in the silicon quantum dot which is beneficial for spin coherence time.
Electric-field-dependent spectroscopy of charge motion using a single-electron transistor

K. R. Brown,L. Sun,B. E. Kane

DOI: https://doi.org/10.1063/1.2207557

IF: 4

2006-05-22

Applied Physics Letters

Abstract:We present observations of background charge fluctuators near an Al–AlOx–Al single-electron transistor on an oxidized Si substrate. The transistor design incorporates a heavily doped substrate and top gate, which allow for independent control of the substrate and transistor island potentials. Through controlled charging of the Si∕SiO2 interface we show that the fluctuators cannot reside in the Si layer or in the tunnel barriers. Combined with the large measured signal amplitude, this implies that the defects must be located very near the oxide surface.

physics, applied
Probing quasiparticle excitations in a hybrid single electron transistor

H. S. Knowles,V. F. Maisi,J. P. Pekola

DOI: https://doi.org/10.1063/1.4730407

IF: 4

2012-06-25

Applied Physics Letters

Abstract:We investigate the behavior of quasiparticles in a hybrid electron turnstile with the aim of improving its performance as a metrological current source. The device is used to directly probe the density of quasiparticles and monitor their relaxation into normal metal traps. We compare different trap geometries and reach quasiparticle densities below 3 μm−3 for pumping frequencies of 20 MHz. Our data show that quasiparticles are excited both by the device operation itself and by the electromagnetic environment of the sample. Our observations can be modelled on a quantitative level with a sequential tunneling model and a simple diffusion equation.

physics, applied
Incoherent dynamics of vibrating single-molecule transistors

K.D. McCarthy,N. Prokof'ev,M.T. Tuominen

DOI: https://doi.org/10.1103/PhysRevB.67.245415

2003-03-08

Abstract:We study the tunneling conductance of nano-scale quantum ``shuttles'' in connection with a recent experiment (H. Park et al., Nature, 407, 57 (2000)) in which a vibrating C^60 molecule was apparently functioning as the island of a single electron transistor (SET). While our calculation starts from the same model of previous work (D. Boese and H. Schoeller, Europhys. Lett. 54, 66(2001)) we obtain quantitatively different dynamics. Calculated I-V curves exhibit most features present in experimental data with a physically reasonable parameter set, and point to a strong dependence of the oscillator's potential on the electrostatics of the island region. We propose that in a regime where the electric field due to the bias voltage itself affects island position, a "catastrophic" negative differential conductance (NDC) may be realized. This effect is directly attributable to the magnitude of overlap of final and initial quantum oscillator states, and as such represents experimental control over quantum transitions of the oscillator via the macroscopically controllable bias voltage.

Condensed Matter
Discrete Charging in Polysilicon Gates of Single Electron Transistors

Dharmraj Kotekar-Patil,Stefan Jauerneck,David Wharam,Dieter Kern,Xavier Jehl,Romain Wacquez,M. Sanquer

DOI: https://doi.org/10.48550/arXiv.1401.1237

2014-01-06

Mesoscale and Nanoscale Physics

Abstract:Low temperature electron transport measurements of single electron transistors fabricated in advanced CMOS technology with polysilicon gates not only exhibit clear Coulomb blockade behavior but also show a large number of additional conductance fluctuations in the nonlinear regime. By comparison with simulations these features are quantitatively attributed to the effects of discretely charged islands in the polysilicon gates.
Single-Electron Devices with A Mechanical Degree of Freedom

Yu A. Pashkin,J. P. Pekola,D. A. Knyazev,T. F. Li,S. Kafanov,O. Astafiev,J. S. Tsai

DOI: https://doi.org/10.1088/1742-6596/400/5/052028

2012-01-01

Abstract:We have succeeded in integrating a single-electron transistor (SET) and a nanomechanical resonator into one device by suspending the SET island. In this case the island has flexural modes whose resonance frequencies depend on the material parameters and the island dimensions. The device is made of Al and can be studied in both the normal and superconducting states allowing observation of various physical phenomena. By driving the resonator with an external force at a frequency close to the resonance frequency of the fundamental flexural mode, we observe a characteristic feature in the dc SET transport, which is due to the mechanical resonance of the island. The resonance frequency as high as 0.5 GHz was detected. The observed response is reproduced in the simulations based on the semiclassical model of single-electron tunneling with the mechanical degree of freedom taken into account. Besides the studies of charge transport in single-electron circuits, the device can also be used for investigation of quantum effects in the charge qubits with a mechanical degree of freedom.
Scanned single-electron probe inside a silicon electronic device

Kevin S. H. Ng,Benoit Voisin,Brett C. Johnson,Jeffrey C. McCallum,Joe Salfi,Sven Rogge

DOI: https://doi.org/10.1021/acsnano.0c00736

2020-01-28

Abstract:Solid-state devices can be fabricated at the atomic scale, with applications ranging from classical logic to current standards and quantum technologies. While it is very desirable to probe these devices and the quantum states they host at the atomic scale, typical methods rely on long-ranged capacitive interactions, making this difficult. Here we probe a silicon electronic device at the atomic scale using a localized electronic quantum dot induced directly within the device at a desired location, using the biased tip of a low-temperature scanning tunneling microscope. We demonstrate control over short-ranged tunnel coupling interactions of the quantum dot with the device's source reservoir using sub-nm position control of the tip, and the quantum dot energy level using a voltage applied to the device's gate reservoir. Despite the $\sim 1$nm proximity of the quantum dot to the metallic tip, we find the gate provides sufficient capacitance to enable a high degree of electric control. Combined with atomic scale imaging, we use the quantum dot to probe applied electric fields and charge in individual defects in the device. This capability is expected to aid in the understanding of atomic-scale devices and the quantum states realized in them.

Mesoscale and Nanoscale Physics
A Theoretical Study of the Electrochemical Gate Effect in a STM-based biomolecular transistor

S. Corni

DOI: https://doi.org/10.1109/TNANO.2007.905548

2006-11-30

Abstract:ElectroChemical Scanning Tunneling Microscopy (ECSTM) is gaining popularity as a tool to implement proof-of-concept single (bio)molecular transistors. The understanding of such systems requires a discussion of the mechanism of the electrochemical current gating, which is intimately related to the electrostatic potential distribution in the tip-substrate gap where the redox active adsorbate is placed. In this article, we derive a relation that connects the local standard potential of the redox molecule in the tunneling junction with the applied electrode potentials, and we compare it with previously proposed relations. In particular, we show that a linear dependence of the local standard potential on the applied bias does not necessarily imply a monotonous potential drop between the electrodes. In addition, we calculate the electrostatic potential distribution and the parameters entering the derived relation for ECSTM on a redox metalloprotein (Azurin from P. Aeruginosa), for which experimental results exist. Finally, we give an estimate of the gating efficiency when the ECSTM setup including Azurin is interpreted as a single biomolecular wet transistor, confirming the effectiveness of the electrochemical gating for this system.

Materials Science,Soft Condensed Matter
Schottky-like barrier characterization of field-effect transistors with multiple quasi-ballistic channels

Anibal Pacheco-Sanchez,Quim Torrent,David Jiménez

DOI: https://doi.org/10.1063/5.0091077

2022-07-11

Abstract:The potential barrier height at the interface formed by a metal contact and multiple one-dimensional (1D) quasi-ballistic channels in field-effect transistors (FETs) is evaluated across different carbon nanotube and nanowire device technologies by means of a Landauer-Büttiker-based extraction methodology (LBM) adapted for multiple 1D-channels. The extraction methodology yields values for an effective Schottky barrier height and a gate coupling coefficient, an indicator of the device working at the quantum capacitance limit. The novel LBM-based approach embracing the mechanisms in 1D electronics is compared to the conventional activation energy method not considering such effects. The latter approach underestimates the potential barrier height at metal-channel interfaces in comparison to the novel methodology. A test structure based on a displaced gate device is proposed based on numerical device simulation results towards an improved accuracy of the method.

Mesoscale and Nanoscale Physics
Coulomb blockade in a Si channel gated by an Al single-electron transistor

L. Sun,K. R. Brown,B. E. Kane

DOI: https://doi.org/10.1063/1.2793712

2007-10-06

Abstract:We incorporate an Al-AlO_x-Al single-electron transistor as the gate of a narrow (~100 nm) metal-oxide-semiconductor field-effect transistor (MOSFET). Near the MOSFET channel conductance threshold, we observe oscillations in the conductance associated with Coulomb blockade in the channel, revealing the formation of a Si single-electron transistor. Abrupt steps present in sweeps of the Al transistor conductance versus gate voltage are correlated with single-electron charging events in the Si transistor, and vice versa. Analysis of these correlations using a simple electrostatic model demonstrates that the two single-electron transistor islands are closely aligned, with an inter-island capacitance approximately equal to 1/3 of the total capacitance of the Si transistor island, indicating that the Si transistor is strongly coupled to the Al transistor.

Mesoscale and Nanoscale Physics
Mechanical modulation of single-electron tunneling through molecular-assembled metallic nanoparticles

Yongqiang Xue,Mark A. Ratner

DOI: https://doi.org/10.1103/PhysRevB.70.155408

2004-07-27

Abstract:We present a microscopic study of single-electron tunneling in nanomechanical double-barrier tunneling junctions formed using a vibrating scanning nanoprobe and a metallic nanoparticle connected to a metallic substrate through a molecular bridge. We analyze the motion of single electrons on and off the nanoparticle through the tunneling current, the displacement current and the charging-induced electrostatic force on the vibrating nanoprobe. We demonstrate the mechanical single-electron turnstile effect by applying the theory to a gold nanoparticle connected to the gold substrate through alkane dithiol molecular bridge and probed by a vibrating platinum tip.

Mesoscale and Nanoscale Physics,Materials Science
Direct Imaging of Nanoscale Conductance Evolution in Ion-Gel-Gated Oxide Transistors

Yuan Ren,Hongtao Yuan,Xiaoyu Wu,Zhuoyu Chen,Yoshihiro Iwasa,Yi Cui,Harold Y. Hwang,Keji Lai

DOI: https://doi.org/10.48550/arXiv.1506.03785

2015-06-11

Mesoscale and Nanoscale Physics

Abstract:Electrostatic modification of functional materials by electrolytic gating has demonstrated a remarkably wide range of density modulation, a condition crucial for developing novel electronic phases in systems ranging from complex oxides to layered chalcogenides. Yet little is known microscopically when carriers are modulated in electrolyte-gated electric double-layer transistors (EDLTs) due to the technical challenge of imaging the buried electrolyte-semiconductor interface. Here, we demonstrate the real-space mapping of the channel conductance in ZnO EDLTs using a cryogenic microwave impedance microscope. A spin-coated ionic gel layer with typical thicknesses below 50 nm allows us to perform high resolution (on the order of 100 nm) sub-surface imaging, while maintaining the capability of inducing the metal-insulator transition under a gate bias. The microwave images vividly show the spatial evolution of channel conductance and its local fluctuations through the transition, as well as the uneven conductance distribution established by a large source-drain bias. The unique combination of ultra-thin ion-gel gating and microwave imaging offers a new opportunity to study the local transport and mesoscopic electronic properties in EDLTs.
Modelling background charge rearrangements near single-electron transistors as a Poisson process

H.-O. Müller,M. Furlan,T. Heinzel,K. Ensslin,H.-O Müller,M Furlan,T Heinzel,K Ensslin

DOI: https://doi.org/10.1209/epl/i2001-00407-y

2001-07-01

Europhysics Letters (EPL)

Abstract:Background charge rearrangements in metallic single-electron transistors are modelled in two-level tunnelling systems as a Poisson process with a scale parameter as only variable. The model explains the recent observation of asymmetric Coulomb blockade peak spacing distributions in metallic single-electron transistors. These distributions are consistent with charge trapping processes within impurities located between transistor island and gate. From the scale parameter determined, we estimate the average size of the tunnelling systems, their density of states, and the height of their energy barrier.
Single‐Molecule Electrochemical Transistors

Jie Bai,Xiaohui Li,Zhiyu Zhu,Yan Zheng,Wenjing Hong

DOI: https://doi.org/10.1002/adma.202005883

IF: 29.4

2021-04-06

Advanced Materials

Abstract:Single-molecule electrochemical transistors are a type of novel molecular devices in which the tunneling current through the single-molecule junction is modulated by the electrochemical gate, and is considered a promising candidate to be employed in molecular integrated circuits for building the future "molecular computers." Benefiting from the particular interfacial electrical double layer, the current modulation process can be realized through direct orbital gating as well as electrochemical electron transfer driven by electrode potential, thus significantly enriching the functions of the transistor devices. This review focuses on the transfer characteristics and the performance of several typical types of single-molecule electrochemical transistors and the prospects for the fabrication toward integrated devices.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Detection of Mechanical Resonance of a Single-Electron Transistor by Direct Current

Yu. A. Pashkin,T. F. Li,J. P. Pekola,O. Astafiev,D. A. Knyazev,F. Hoehne,H. Im,Y. Nakamura,J. S. Tsai

DOI: https://doi.org/10.1063/1.3455880

IF: 4

2010-01-01

Applied Physics Letters

Abstract:We have suspended an Al based single-electron transistor whose island can resonate freely between the source and drain leads forming the clamps. In addition to the regular side gate, a bottom gate with a larger capacitance to the SET island is placed underneath to increase the SET coupling to mechanical motion. The device can be considered as a doubly clamped Al beam that can transduce mechanical vibrations into variations of the SET current. Our simulations based on the orthodox model, with the SET parameters estimated from the experiment, reproduce the observed transport characteristics in detail.
Single atom impurity in a single molecular transistor

S. J. Ray

DOI: https://doi.org/10.1063/1.4898564

IF: 2.877

2014-10-21

Journal of Applied Physics

Abstract:The influence of an impurity atom on the electrostatic behaviour of a Single Molecular Transistor was investigated through Ab-initio calculations in a double-gated geometry. The charge stability diagram carries unique signature of the position of the impurity atom in such devices which together with the charging energy of the molecule could be utilised as an electronic fingerprint for the detection of such impurity states in a nano-electronic device. The two gated geometry allows additional control over the electrostatics as can be seen from the total energy surfaces (for a specific charge state), which is sensitive to the positions of the impurity. These devices which are operational at room temperature can provide significant advantages over the conventional silicon based single dopant devices functional at low temperature. The present approach could be a very powerful tool for the detection and control of individual impurity atoms in a single molecular device and for applications in future molecular electronics.

physics, applied
A Micro Resonant Electrometer with Single-Electron Charge Resolution at Room Temperature

Dongyang Chen,Hemin Zhang,Jiangkun Sun,Milind Pandit,Guillermo Sobreviela,Yong Wang,Qian Zhang,Ashwin Seshia,Jin Xie

DOI: https://doi.org/10.1109/MEMS46641.2020.9056373

2020-01-01

Abstract:The measurement of charge at single electron level at room temperature in analog and digital electronics is limited due to considerable thermal noise. In this work, we propose a method of charge detection with resolution of 0.17e/√Hz at room temperature by resonant electrometry based on tracking quasi-digital frequency shift of a force sensitive micromechanical oscillator stemming from the modal stiffness perturbation pertaining to charge input. We build a closed-loop system for the measurement and perform real-time monitoring of charge accumulation on the gate corresponding to 67 electrons per step. Analysis on thermomechanical noise suggests an ultimate threshold of charge resolution at the order of 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-4</sup> e/√Hz is possible benefitting from the high Q-factor of the resonator.
Ferritin Single-Electron Transistor

Jacqueline A Labra-Muñoz,Herre S J van der Zant

DOI: https://doi.org/10.1021/acs.jpcb.4c01937

IF: 3.466

2024-06-26

The Journal of Physical Chemistry B

Abstract:We report on the fabrication of a single-electron transistor based on ferritin using wide self-aligned nanogap devices. A local gate below the gap area enables three-terminal electrical measurements, showing the Coulomb blockade in good agreement with the single-electron tunneling theory. Comparison with this theory allows extraction of the tunnel resistances, capacitances, and gate coupling. Additionally, the data suggest the presence of two separate islands coupled in series or in parallel:...

chemistry, physical
Strong tunneling and Coulomb blockade in a single-electron transistor

D. Chouvaev,L. S. Kuzmin,D. S. Golubev,A. D. Zaikin

DOI: https://doi.org/10.1103/physrevb.59.10599

IF: 3.7

1999-04-15

Physical Review B

Abstract:We have developed a detailed experimental study of a single-electron transistor in a strong tunneling regime. Although weakened by strong charge fluctuations, Coulomb effects were found to persist in all samples including one with the effective conductance eight times higher than the quantum value (6.45 kΩ)-1. A good agreement between our experimental data and theoretical results for the strong tunneling limit is found. A reliable operation of transistors with conductances 3–4 times larger than the quantum value is demonstrated.

physics, condensed matter, applied,materials science, multidisciplinary

Micromechanical electrometry of single-electron transistor island charge

Coulomb blockade in a nanoscale phosphorus-in-silicon island

A Silicon Cluster Based Single Electron Transistor with Potential Room-Temperature Switching

Electric-field-dependent spectroscopy of charge motion using a single-electron transistor

Probing quasiparticle excitations in a hybrid single electron transistor

Incoherent dynamics of vibrating single-molecule transistors

Discrete Charging in Polysilicon Gates of Single Electron Transistors

Single-Electron Devices with A Mechanical Degree of Freedom

Scanned single-electron probe inside a silicon electronic device

A Theoretical Study of the Electrochemical Gate Effect in a STM-based biomolecular transistor

Schottky-like barrier characterization of field-effect transistors with multiple quasi-ballistic channels

Coulomb blockade in a Si channel gated by an Al single-electron transistor

Mechanical modulation of single-electron tunneling through molecular-assembled metallic nanoparticles

Direct Imaging of Nanoscale Conductance Evolution in Ion-Gel-Gated Oxide Transistors

Modelling background charge rearrangements near single-electron transistors as a Poisson process

Single‐Molecule Electrochemical Transistors

Detection of Mechanical Resonance of a Single-Electron Transistor by Direct Current

Single atom impurity in a single molecular transistor

A Micro Resonant Electrometer with Single-Electron Charge Resolution at Room Temperature

Ferritin Single-Electron Transistor

Strong tunneling and Coulomb blockade in a single-electron transistor