M.P. Blencowe,Y. Zhang
Abstract:We consider the possibility of using a micromechanical gate electrode located just above the island of a single-electron transistor to measure directly the fluctuating island charge due to tunnelling electrons.
What problem does this paper attempt to address?
The problem that this paper attempts to solve is: how to directly measure the fluctuating charge on the Single - Electron Transistor (SET) island using a micromechanical gate electrode. Specifically, the author explores the possibility of detecting the fluctuating charge caused by tunneling electrons through the micromechanical gate electrode located above the SET island.
### Problem Background
The Single - Electron Transistor (SET) has been proven to be a very sensitive charge detector, and its noise floor can reach approximately \(10^{-5}e/\sqrt{\text{Hz}}\). In order to further improve its sensitivity, it is necessary to understand the sources of background charge fluctuations, which dominate in current devices. In contrast, there are fewer studies on the direct detection of the inherent noise of SET itself.
### Research Method
The author proposes a new method, that is, using a micromechanical electrode as a charge detector. Specifically, they consider a cantilever gate electrode, which is directly located on the SET island and whose displacement can be measured by the magnetomotive method or fiber - optic interferometer. Through this method, the charge fluctuations caused by electrons tunneling to and from the island can be directly measured.
### Main Formulas
1. **Electrostatic Energy**:
\[
U = \frac{C_g}{2 C_\Sigma^2} [C (V_{sd} - 2V_g) - n_e]^2
\]
where \(C_g\) is the gate capacitance, \(C_\Sigma = 2C + C_g\) is the total capacitance, and \(n_e\) is the number of excess electrons on the island.
2. **Force Acting on the Cantilever**:
\[
F = -\frac{\partial U}{\partial x} = \frac{1}{d} \left( \frac{2C - C_g}{2C + C_g} \right) U
\]
where \(d\) is the gap between the cantilever electrode and the SET island.
3. **Force Noise Spectral Density**:
\[
S_F = \frac{[F(n + 1)-F(n)]^2}{I_{sd}/e}
\]
where \(I_{sd}\) is the maximum value of the source - drain current peak, which can be expressed as \(I_{sd}=V_{sd}/4R\).
4. **Thermomechanical Force Noise**:
\[
S_F^{th} = \left( \frac{w t^2}{l Q} \right)^{1/2} (E \rho)^{1/4} (k_B T)^{1/2}
\]
where \(l\), \(w\) and \(t\) are the length, width and thickness of the cantilever respectively, \(Q\) is the quality factor, \(E\) is Young's modulus, \(\rho\) is the mass density, \(k_B\) is the Boltzmann constant, and \(T\) is the temperature.
### Conclusion
Through the above analysis, the author concludes that for given parameters (such as \(R = 50 \, \text{k}\Omega\), \(C = 0.25 \, \text{fF}\), \(C_g = 0.1 \, \text{fF}\), \(V_{sd} = 0.1 \, \text{mV}\)), the SET force noise is approximately:
\[
S_F^{1/2} \approx 1.5 V_g \, \text{aN}/\sqrt{\text{Hz}}
\]
This indicates that when \(V_g \sim 1 \, \text{V}\), the SET force noise can be detected. However, in order to avoid the problem of the cantilever being pulled towards the substrate surface, the author suggests arranging the cantilever perpendicular to the surface, or using a shorter, stiffer cantilever and applying a modulated gate voltage.
### Future Work
The author also points out that further research is needed on the response of the cantilever electrode to the fluctuating charge, especially considering the reaction of the cantilever on the SET, which requires solving the dynamics problem of the coupled SET - cantilever system.