Abstract:Solution processed field-effect transistors based on single crystalline silicon nanowires (Si NWs) with metal Schottky contacts are demonstrated. The semiconducting layer was deposited from a nanowire ink formulation at room temperature. The devices with 230nm thick SiO2 gate insulating layers show excellent output current-voltage characteristics with early saturation voltages under 2 volts, constant saturation current and exceptionally low dependence of saturation voltage with the gate field. Operational principles of these devices are markedly different from traditional ohmic-contact field-effect transistors (FETs), and are explained using the source-gated transistor (SGT) concept in which the semiconductor under the reverse biased Schottky source barrier is depleted leading to low voltage pinch-off and saturation of drain current. Device parameters including activation energy are extracted at different temperatures and gate voltages to estimate the Schottky barrier height for different electrode materials to establish transistor performance - barrier height relationships. Numerical simulations are performed using 2D thin-film approximation of the device structures at various Schottky barrier heights. Without any adjustable parameters and only assuming low p-doping of the transistor channel, the modelled data show exceptionally good correlation with the measured data. From both experimental and simulation results, it is concluded that source-barrier controlled nanowire transistors have excellent potential advantages compared with a standard FET including mitigation of short-channel effects, insensitivity in device operating currents to device channel length variation, higher on/off ratios, higher gain, lower power consumption and higher operational speed for solution processable and printable nanowire electronics.

Room-temperature single-electron tunneling in highly-doped silicon-on-insulator nanoscale field-effect transistors

Nitrogen in silicon for room temperature single-electron tunneling devices

Single-electron quantization at room temperature in a-few-donor quantum dot in silicon nano-transistors

Temperature Dependence of Electronic Behaviors in N-Type Multiple-Channel Junctionless Transistors

A Silicon Cluster Based Single Electron Transistor with Potential Room-Temperature Switching

Electrical Conduction of Silicon Oxide Containing Silicon Quantum Dots

Geometry and Temperature Effects on the Threshold Voltage Characteristics of Silicon Nanowire MOS Transistors

Single donor ionization energies in a nanoscale CMOS channel

Gate-driven transition temperatures of electron hopping behaviors in Hubbard bands formed by dopant-induced QD array in silicon nanowire

Room Temperature Quantum Control of N-Donor Electrons at Si/SiO2 Interface

Room Temperature Electron Tunneling and Storage in a Nanocrystalline Silicon Floating Gate Structure

Coulomb blockade in a nanoscale phosphorus-in-silicon island

Temperature-dependent carrier transport behaviors in phosphorus-doped silicon nanocrystals/silicon carbide multilayers

A Silicon Nanocrystal Tunnel Field Effect Transistor

Transition of Carrier Transport Behaviors with Temperature in Phosphorus-Doped Si Nanocrystals/SiO 2 Multilayers

Observation of room temperature gate tunable quantum confinement effect in photodoped junctionless MOSFET

Highly uniform and stable n-type carbon nanotube transistors by using positively charged silicon nitride thin films

Incomplete Ionization-Dependent Carrier Mobility in Silicon-on-Insulator n-p-n Double-Gate Tunnel Field-Effect Transistors

Room-Temperature Graphene-Nanoribbon Tunneling Field-Effect Transistors

Probing limits of STM field emission patterned Si:P $δ$-doped devices

Si Nanowire - Array Source Gated Transistors