Dopant-controlled single-electron pumping through a metallic island

Tobias Wenz,Frank Hohls,Xavier Jehl,Marc Sanquer,Sylvain Barraud,Jevgeny Klochan,Girts Barinovs,Vyacheslavs Kashcheyevs
DOI: https://doi.org/10.1063/1.4951679
2016-03-01
Abstract:We investigate a hybrid metallic island / single dopant electron pump based on fully-depleted silicon on insulator technology. Electron transfer between the central metallic island and the leads is controlled by resonant tunneling through single phosphorus dopants in the barriers. Top gates above the barriers are used control the resonance conditions. Applying radio frequency signals to the gates, non-adiabatic quantized electron pumping is achieved. A simple deterministic model is presented and confirmed by comparing measurements with simulations.
Mesoscale and Nanoscale Physics
What problem does this paper attempt to address?
This paper aims to solve the problem of how to achieve quantized current pumping through the precise control of the transport of a single electron. Specifically, the authors studied a hybrid metal - island / single - dopant electron - pumping device based on the fully depleted silicon - on - insulator (SOI) technology. This new - type device uses the state of a single phosphorus - doped atom in the barrier below the gate to control the tunneling coupling between the central metal island and the source and drain. By applying a radio - frequency (RF) signal to the gate, non - adiabatic quantized single - electron pumping was achieved. ### Key issues 1. **Precise control of single - electron transport**: In order to achieve quantized current pumping, it is necessary to be able to precisely control the transport of a single electron during each pumping cycle. 2. **High - precision and high - frequency operation**: Compared with traditional GaAs - based devices, silicon - based devices can operate under lower operating requirements and have the potential for higher operating frequencies. 3. **Taking advantage of CMOS technology**: Silicon - based devices can be manufactured using the mature CMOS process, thus having the possibility of circuit integration, such as on - chip driving electronics and charge detectors. ### Main methods - **Device structure**: The device consists of a central metal island and two top gates, and the barrier below the gates contains a single phosphorus - doped atom. By adjusting the gate voltage, the energy levels of these doped atoms can be controlled, thereby regulating the electron tunneling process. - **Non - adiabatic pumping scheme**: By applying sinusoidal RF signals with a 180 - degree phase difference to the two gates, the gate voltages are made to change along a specific path in the Vg1 - Vg2 plane, achieving non - adiabatic quantized current pumping. - **Model verification**: A simple deterministic model was proposed and verified. This model assumes that the discrete charge states in the central island and the barrier are energy - sharp at all times, and the charge on the central island will change only when tunneling through the doped state in the barrier is energetically allowed. ### Experimental results - **Current quantization steps**: The experimental results showed obvious current quantization steps, indicating that the number of electrons transferred during each pumping cycle is an integer multiple of the elementary charge e. - **Current reversal phenomenon**: The expected current reversal phenomenon was observed under the condition of small RF amplitudes, which further proved the possibility of gate - controlled current reversal. - **Comparison between simulation and measurement**: Through simulation calculations, the experimental measurement results were verified, and the changes in the number of transferred electrons under different conditions were explained. In conclusion, this paper shows how to achieve efficient single - electron pumping through precise control of the state of a single doped atom, and provides new ideas and technical approaches for the future development of quantum current sources with higher precision and higher frequencies.