Non-adiabatic single-electron pump in a dopant-free GaAs/AlGaAs 2DEG

B. Buonacorsi,F. Sfigakis,A. Shetty,M. C. Tam,H. S. Kim,S.R. Harrigan,F. Hohls,M. E. Reimer,Z. R. Wasilewski,J. Baugh
DOI: https://doi.org/10.1063/5.0062486
2021-09-17
Abstract:We have realized quantized charge pumping using non-adiabatic single-electron pumps in dopant-free GaAs two-dimensional electron gases (2DEGs). The dopant-free III-V platform allows for ambipolar devices, such as p-i-n junctions, that could be combined with such pumps to form electrically-driven single photon sources. Our pumps operate at up to 0.95 GHz and achieve remarkable performance considering the relaxed experimental conditions: one-gate pumping in zero magnetic field and temperatures up to 5K, driven by a simple RF sine waveform. Fitting to a universal decay cascade model yields values for the figure of merit $\delta$ that compare favorably to reported modulation-doped GaAs pumps operating under similar conditions. The devices reported here are already suitable for optoelectronics applications, and with further improvement could offer a route to a current standard that does not require sub-Kelvin temperatures and high magnetic fields.
Mesoscale and Nanoscale Physics
What problem does this paper attempt to address?
The key problem that this paper attempts to solve is how to realize non - adiabatic single - electron pumps in an undoped GaAs/AlGaAs two - dimensional electron gas (2DEG) system. Specifically, the authors hope to achieve efficient and stable single - electron pumping by simplifying experimental conditions (such as zero magnetic field, simple RF sinusoidal wave driving, relatively high temperature, etc.), without sacrificing performance, thus providing key components for quantum optoelectronic applications (such as single - photon sources). ### Specific objectives include: 1. **Achieve efficient single - electron pumping**: By realizing non - adiabatic single - electron pumping in undoped GaAs/AlGaAs 2DEG, verify its performance under high - frequency (up to 0.95 GHz), high - temperature (up to 5 K) and zero - magnetic - field conditions. 2. **Simplify experimental conditions**: Compared with the traditional doped GaAs/AlGaAs 2DEG, study the performance of the undoped system, especially evaluate its possibility as a current standard or single - photon source without the need for low temperature and strong magnetic field. 3. **Explore potential applications**: Explore the application potential of this new type of single - electron pumping in quantum optics and quantum metrology, especially for constructing a fully electrically - controlled, on - demand generated single - photon source, as well as possible voltage standards or other single - electron devices. ### Main achievements: - The experimental results show that under relatively loose experimental conditions, the single - electron pumping in undoped GaAs/AlGaAs 2DEG exhibits excellent performance, especially being able to achieve stable quantized current even at high frequencies and high temperatures. - By fitting the universal decay cascade model, performance indicators (such as δ values) similar to or even better than those of the doped GaAs 2DEG reported in the existing literature are obtained, which indicates that the undoped system has great application potential. ### Potential impacts: - This new type of single - electron pumping can significantly reduce the complex equipment requirements (such as dilution refrigerators, large superconducting magnets, etc.) required for quantum standard measurement, thus making it easier to implement and apply. - It provides new ideas and technical paths for further developing quantum optoelectronic applications based on single - electron pumping.