Abstract:Control of the Coulomb interaction between single electrons is vital for realizing quantum information processing using flying electrons and, particularly, for the realization of deterministic two-qubit operations. Since the strength of the Coulomb interaction increases with decreasing distance, a collision experiment of single electrons would be an ideal way to investigate it. Moreover, it would be useful to study such a Coulomb collision in silicon system, which has been extensively studied for qubit applications but so far has not been used for making Coulomb collisions at the single-electron level. Here, we made two series-coupled tunable-barrier single-electron pumps in silicon and used one to inject a hot single electron into the other pump in each pumping cycle. The hot single electron collides with a cold single electron confined in the other single-electron pump. We observed a current flow due to ejection not only of the hot single electron but also of the confined cold single electron. The latter leads to an excess current at a current plateau at a certain voltage range. We also found that increasing the number of cold electrons from one to two increased the cold-electron current by at least twofold. These results can be explained by a charging effect due to the Coulomb interaction. This observation is an important step toward quantum manipulation of flying single electrons in silicon.

What problem does this paper attempt to address?

### What problems does this paper attempt to solve? This paper aims to study the Coulomb collisions between hot and cold electrons in silicon - based single - electron pumps in order to achieve precise manipulation of flying single electrons in quantum information processing. Specifically, the paper focuses on the following key issues: 1. **Study of Coulomb interactions**: - Controlling the Coulomb interactions between single electrons is crucial for achieving quantum information processing based on flying electrons (especially deterministic two - qubit operations). - The strength of the Coulomb interaction increases as the distance decreases, so studying single - electron collisions experimentally is an ideal way to understand this interaction. 2. **Coulomb collisions in silicon systems**: - Although silicon systems have been widely studied in qubit applications, the study of achieving Coulomb collisions at the single - electron level is the first of its kind. - Silicon materials, due to their high - precision and high - speed operation characteristics, as well as relatively high operating temperatures (liquid helium temperature), are ideal candidates for flying qubits. 3. **Experimental design and results**: - The paper injects a hot single electron into another pump by connecting two single - electron pumps with adjustable barriers in series, making it collide with a cold single electron. - An additional current due to the ejection of the cold single electron is observed, which provides evidence for the existence of Coulomb interactions. - The experiment also found that when the number of cold electrons is increased from one to two, the cold - electron current increases by at least a factor of two. These results can be explained by the charging effect of the Coulomb interaction. 4. **Impact on future research**: - These observations lay the foundation for further exploration of the quantum manipulation of flying single electrons in silicon - based systems, and are particularly significant in achieving controllable two - qubit gates. ### Summary This paper experimentally verifies the Coulomb collisions between hot and cold electrons in silicon - based single - electron pumps and shows the current changes caused by these collisions. The research results not only reveal the existence of strong Coulomb interactions but also provide important experimental evidence for future flying - qubit operations based on silicon systems.

Coulomb collisions of hot and cold single electrons in series-coupled silicon single-electron pumps

Effects of electrostatic confinement in a silicon single-electron pump

A Silicon Single-Electron Pump With Tunable Electrostatic Confinement

An ambipolar single-charge pump in silicon

A Silicon Cluster Based Single Electron Transistor with Potential Room-Temperature Switching

Advances toward high-accuracy operation of tunable-barrier single-hole pumps in silicon

Advances toward high-accuracy gigahertz operation of tunable-barrier single-hole pumps in silicon

A Josephson Quantum Electron Pump

Coherent electron transport in silicon quantum dots

Silicon-charge-pump operation limit above and below liquid-helium temperature

Single-electron operation of a silicon-CMOS 2x2 quantum dot array with integrated charge sensing

Gate-sensing coherent charge oscillations in a silicon field-effect transistor

Conditional quantum operation of two exchange-coupled single-donor spin qubits in a MOS-compatible silicon device

Dopant-controlled single-electron pumping through a metallic island

Atomic-scale Control of Tunnel Coupling

A hybrid metal/semiconductor electron pump for quantum metrology

GHz photon-activated hopping between localized states in a silicon quantum dot

Scanned single-electron probe inside a silicon electronic device

Exchange coupling in a linear chain of three quantum-dot spin qubits in silicon

Universality and Multiplication of Gigahertz-Operated Silicon Pumps with Parts Per Million-Level Uncertainty

Strongly correlated charge transport in silicon MOSFET quantum dots