Abstract:The spin states of electrons confined in semiconductor quantum dots form a promising platform for quantum computation. Recent studies of silicon CMOS qubits have shown coherent manipulation of electron spin states with extremely high fidelity. However, manipulation of single electron spins requires large oscillatory magnetic fields to be generated on-chip, making it difficult to address individual qubits when scaling up to multi-qubit devices. The spin-orbit interaction allows spin states to be controlled with electric fields, which act locally and are easier to generate. While the spin-orbit interaction is weak for electrons in silicon, valence band holes have an inherently strong spin-orbit interaction. However, creating silicon quantum dots in which a single hole can be localised, in an architecture that is suitable for scale-up to a large number of qubits, is a challenge. Here we report a silicon quantum dot, with an integrated charge sensor, that can be operated down to the last hole. We map the spin states and orbital structure of the first six holes, and show they follow the Fock-Darwin spectrum. We also find that hole-hole interactions are extremely strong, reducing the two-hole singlet-triplet splitting by 90% compared to the single particle level spacing of 3.5 meV. These results provide a route to single hole spin quantum bits in a planar silicon CMOS architecture.

Single hole transport in a silicon metal-oxide-semiconductor quantum dot

Quantum dots with split enhancement gate tunnel barrier control

Few-electrode design for silicon MOS quantum dots

A gate-defined silicon quantum dot molecule

A Silicon Cluster Based Single Electron Transistor with Potential Room-Temperature Switching

Double quantum dot with tunable coupling in an enhancement-mode silicon metal-oxide semiconductor device with lateral geometry

Combining n-MOS Charge Sensing with p-MOS Silicon Hole Double Quantum Dots in a CMOS platform

Spin filling and orbital structure of the first six holes in a silicon metal-oxide-semiconductor quantum dot

Single and Double Hole Quantum Dots in Strained Ge/SiGe Quantum Wells

A singlet-triplet hole-spin qubit in MOS silicon

Undoped accumulation-mode Si/SiGe quantum dots

A low-disorder Metal-Oxide-Silicon double quantum dot

Gate-sensing coherent charge oscillations in a silicon field-effect transistor

Coupled vertical double quantum dots at single-hole occupancy

Single-electron operation of a silicon-CMOS 2x2 quantum dot array with integrated charge sensing

Transport Characteristics of Si-Based Single-Electron Transistors Having a High Gate Modulation Factor

Quantum transport in a nanosize double-gate metal-oxide-semiconductor field-effect transistor

Fabrication of quantum dots in undoped Si/Si$_{0.8}$Ge$_{0.2}$ heterostructures using a single metal-gate layer

Hole Mobility in the Ultra-Thin-body Junctionless Germanium-on-insulator P-Channel Metal-Oxide-semiconductor Field-Effect Transistors

Ambipolar quantum dots in undoped silicon fin field-effect transistors

Quantum Dot With a Diamond-Shaped Channel MOSFET on a Bulk Si Substrate