Abstract:In this Report we show the role of charge defects in the context of the formation of electrostatically defined quantum dots. We introduce a barrier array structure to probe defects at multiple locations in a single device. We measure samples both before and after an annealing process which uses an Al$_2$O$_3$ overlayer, grown by atomic layer deposition. After passivation of the majority of charge defects with annealing we can electrostatically define hole quantum dots up to 180 nm in length. Our ambipolar structures reveal amphoteric charge defects that remain after annealing with charging energies of ~10 meV in both the positive and negative charge state.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: **How to improve the formation and performance of silicon quantum dots by passivating charge defects, thereby laying the foundation for the realization of qubits with long coherence times**. Specifically, the author focuses on the influence of charge defects at the silicon/silicon dioxide (Si/SiO₂) interface on electrostatically - defined quantum dots. These defects can lead to problems such as unwanted quantum dot formation, resonant tunneling characteristics and Anderson localization, thus affecting the quality and performance of quantum dots. To reduce the influence of these defects, the author introduced an aluminum oxide (Al₂O₃) capping layer grown using atomic layer deposition (ALD) and passivated most of the charge defects through annealing treatment. ### Main problems and solutions 1. **Influence of charge defects on quantum dot formation**: - Charge defects can interfere with the formation of quantum dots, resulting in additional single - charge tunneling events and making the formed quantum dots unclear. - Solution: By adding an Al₂O₃ capping layer on the device and performing an annealing treatment at 300°C, most of the charge defects are passivated. 2. **Improving the controllability and consistency of quantum dots**: - After the annealing treatment, the Coulomb diamond structure of the quantum dots is more regular, and the charging energy is about 2 - 3 meV, indicating that the formation of quantum dots is more controllable. - Solution: By optimizing the annealing process, the number of charge defects is significantly reduced, making the formation of quantum dots more consistent and stable. 3. **Studying the properties of remaining charge defects**: - Although most of the charge defects are passivated, a small number of charge defects still exist and exhibit amphoteric behavior, that is, they have a charging energy of about 10 meV in both positive and negative charge states. - Solution: By comparing the data before and after the experiment, the existence of these remaining charge defects is confirmed, and it is speculated that they may be unpassivated Pb centers or other types of defects. ### Summary This paper shows that the Al₂O₃ capping layer grown by ALD and the annealing treatment can effectively passivate most of the charge defects at the Si/SiO₂ interface, thereby significantly improving the formation and performance of electrostatically - defined quantum dots. This provides important technical support for the realization of qubits with long coherence times in the future.

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