Abstract:The silicon-rich SiN(x) films were fabricated on Si(100) substrate and quartz substrate at different substrate temperatures varying from room temperature to 400 degrees C by bipolar pulse ane RF magnetron co-sputtering deposition technique. After deposition, the films were annealed in a nitrogen atmosphere by rapid photothermal annealing at 1050 degrees C for 3 minutes. This thermal step allows the formation of the silicon quantum dots. Fourier transform infrared spectroscopy, Raman spectroscopy, grazing incidence X-ray diffraction and photoluminescence spectroscopy were used to analyze the bonding configurations, microstructures and luminescence properties of the films. The experimental results showed that: silicon-rich Si-N bonds were found in Fourier transform infrared spectra, suggesting that the silicon-rich SiN, films were successfully prepared; when the substrate temperature was not lower than 200 degrees C, the Raman spectra of the films showed the transverse optical mode of Si-Si vibration, while the significant diffraction peaks of Si(111) and Si(311) were shown in grazing incidence X-ray diffraction spectra, confirming the formation of silicon quantum dots; our work indicated that there was an optimal substrate temperature (300 degrees C), which could significantly increase the amount and the crystalline volume fraction of silicon quantum dots; three visible photoluminescence bands can be obtained for both 30 degrees C sample and 400 degrees C sample, and in combination with Raman results, the emission peaks were reasonably explained by using the quantum confinement effect and radiative recombination defect state of Si nanocrystals; the average size of the silicon quantum dots is 3.5 and 3.4 nm for the 300 degrees C sample and 400 degrees C sample, respectively. These results are useful for optimizing the fabrication parameters of silicon quantum dots embedded in SiN. thin films and have valuable implications for silicon based photoelectric device applications.

Characteristics and Charge Storage of Silicon Quantum Dots Embedded in Silicon Nitride Film

Fabrication and Characterisation of Silicon Quantum Dots in SiO 2 /si 3 N 4 Hybrid Matrix

Properties of Silicon Quantum Dots Embedded in Silicon Nitride Deposited by Magnetron Co-Sputtering

Synthesis and Optical Properties of Si-Rich Nitride Containing Silicon Quantum Dots

Annealing and excitation dependent photoluminescence of silicon rich silicon nitride films with silicon quantum dots

Photoluminescences and Structrue Performances of Si-Rich Silicon Nitride Thin Films Containing Si Quantum Dots

Preparation and Spectrial Studies of Silicon Nitride Thin Films Containing Amorphous Silicon Quantum Dots

Spectral Characteristics of Si Quantum Dots Embedded in Sinx Thin Films Prepared by Magnetron Co-Sputtering

Structural Evolution And Photoluminescence Of Annealed Si-Rich Nitride With Si Quantum Dots Prepared By Plasma Enhanced Chemical Vapor Deposition

Fabrication and Characterization of Silicon Quantum Dots in Si-rich Silicon Carbide Films.

Charging/Discharging Behavior And Mechanism Of Silicon Quantum Dots Embedded In Amorphous Silicon Carbide Films

Optical Properties of High Photoluminescence Silicon Nanocrystals Embedded in SiO2 Matrices Obtained by Annealing Hydrogen Silsesquioxane

Photoluminescence and Carrier Transport Mechanisms of Silicon-Rich Silicon Nitride Light Emitting Device

Influence of hydrogen passivation on the luminescence of Si quantum dots embedded in Si3Nx

Preparation and Photoluminescence of Nanocrystalline Si-Rich Silicon Oxide Films by Pecvd

Fabrication and Characterization of High Density Silicon Quantum Dots in Gradient Si-Rich Carbide Films

Density improvement of Si quantum dots embedded in Si-rich silicon nitride films by light-filtering rapid thermal processing

Charge Storage and Electron/light Emission Properties of Silicon Nanocrystals

Structure, Optical Property, And Reaction Process Of Si Quantum Dots Embedded In An Amorphous Silicon Carbide Matrix

The Synthesis and Structural Properties of Crystalline Silicon Quantum Dots Upon Thermal Annealing of Hydrogenated Amorphous Si-Rich Silicon Carbide Films

Si Quantum Dots Embedded in an Amorphous SiC Matrix : Nanophase Control by Non-Equilibrium Plasma Hydrogenation