Abstract:Publication date: 30 August 2021 Source: Solid State Phenomena Vol. 323 Author(s): Jia Xin Sun, Bing Qing Zhou, Xin Gu Silicon-rich silicon nitride thin films are prepared on P-type monocrystalline silicon wafer (100) and glass substrate by plasma chemical vapor deposition with reaction gas sources SiH4 and NH3. The deposited samples are thermally annealed from 600°C to 1000°C in an atmosphere furnace filled with high purity nitrogen. The annealing time is 60 minutes. Fourier transform infrared spectroscopy (FTIR) is carried out to investigate the bonding configurations in the films. The results show that the Si-H bond and N-H bond decrease with the increase of annealing temperature, and completely disappear at the annealing temperature of 900°C. But the Si-N bond is enhanced with the increase of annealing temperature, and the blue shift occurs, then Si content in the film increases. The Raman Spectra show that the amorphous Si Raman peak appears at 480 cm-1 in the film at 700°C. The Raman spectra of the films annealed at 1000 °C is fitted with two peaks, and a peak at 497 cm -1 is found, which indicated that the Si phase in the films changed from amorphous to crystalline with the increase of annealing temperature. The experiment also analyses the luminescence properties of the samples through PL spectrum, and it is found that there are five luminescence peaks in each sample under different annealing temperature. Based on the analysis of Raman spectrum and FTIR spectrum, the PL peak of amorphous silicon quantum dots appears at the wavelength range of 525-555nm, and the other four PL peaks are all from the defect state luminescence in the thin films, and the amorphous silicon quantum dot size is calculated according to the formula.

Annealing and excitation dependent photoluminescence of silicon rich silicon nitride films with silicon quantum dots

Influence of annealing on microstructures and photoluminescence of nano-composite silicon film

Photoluminescence of Tb3+ Doped SiNx Films Grown by Plasma-Enhanced Chemical Vapor Deposition

Fabrication and Characterisation of Silicon Quantum Dots in SiO 2 /si 3 N 4 Hybrid Matrix

Photoluminescence of Si-Rich Silicon Nitride: Defect-Related States and Silicon Nanoclusters

Preparation and Photoluminescence of Nanocrystalline Si-Rich Silicon Oxide Films by Pecvd

Effect of annealing on microstructure and photoluminescence of nano-composite silicon film

Effect of Annealing Temperature on Photoluminescence Performance and Structure of Si-rich Silicon Nitride

Influence of hydrogen passivation on the luminescence of Si quantum dots embedded in Si3Nx

Research on Photoluminescence and Electroluminescence of Si-Rich SiN Films

Characteristics and Charge Storage of Silicon Quantum Dots Embedded in Silicon Nitride Film

Preparation and Spectrial Studies of Silicon Nitride Thin Films Containing Amorphous Silicon Quantum Dots

Light Emission from Si Nanoclusters Formed at Low Temperatures

Optical Properties of High Photoluminescence Silicon Nanocrystals Embedded in SiO2 Matrices Obtained by Annealing Hydrogen Silsesquioxane

Sensitizing Properties of Luminescence Centers on the Emission of Er3+ in Si-Rich Sio2 Film

Photoluminescence of Tb3+-doped SiNx films with different Si concentrations

Electroluminescence of Silicon-Rich Silicon Nitride Light-Emitting Devices

Optical Transmission and Photoluminescence of Silicon Nitride Thin Films Implanted with Si Ions

Photoluminescence Enhancement of Si Nanocrystals Embedded in SiO 2 by Thermal Annealing in Air

Temperature Dependence of Sensitized Er3+ Luminescence in Silicon-Rich Oxynitride Films

Evolution of Photoluminescence from Si Nanocrystals Embedded in a SiO2 Matrix Prepared by Reactive Pulsed Laser Deposition