Abstract:LEDs based on hexagonal InGaN/GaN quantum wells are dominant technology for many lighting applications. However, their luminous efficacy for green and amber emission and at high drive currents remains limited. Growing quantum wells instead in the cubic phase is a promising alternative because, compared to hexagonal GaN, it benefits from a reduced bandgap and is free of the strong polarization fields that can reduce the radiative recombination rate. Initial attempts to grow cubic GaN in the 1990s employed molecular beam epitaxy, but now, metal-organic chemical vapor deposition can also be used. Nonetheless, high phase purity requires careful attention to growth conditions and the quantification of any unwanted hexagonal phase. In contrast to hexagonal GaN, in which threading dislocations are key, at its current state of maturity, the most important extended structural defects in cubic GaN are stacking faults. These modify the optical properties of cubic GaN films and propagate into active layers. In quantum wells and electron blocking layers, segregation of alloying elements at stacking faults has been observed, leading to the formation of quantum wires and polarized emission. This observation forms part of a developing understanding of the optical properties of cubic InGaN quantum wells, which also offer shorter recombination lifetimes than their polar hexagonal counterparts. There is also growing expertise in p-doping, including dopant activation by annealing. Overall, cubic GaN has rapidly transitioned from an academic curiosity to a real prospect for application in devices, with the potential to offer specific performance advantages compared to polar hexagonal material.

Green-Amber Emission From High Indium Content Ingan Quantum Wells Improved By Interface Modification Of Semipolar (1122) Gan Templates

Improved semipolar green InGaN/GaN quantum wells on asymmetrically grown (11(2)over-bar2) GaN templates and their correlations

Improved Semipolar Green InGaN/GaN Quantum Wells on Asymmetrically Grown (112̄2) GaN Templates and Their Correlations

Impact of interfaces on photoluminescence efficiency of high indium content InGaN quantum wells

Semi-polar (20–21) InGaN/GaN Multiple Quantum Wells Grown on Patterned Sapphire Substrate with Internal Quantum Efficiency Up to 52 Per Cent

Improving the Internal Quantum Efficiency of Green Ingan Quantum Dots Through Coupled Ingan/Gan Quantum Well and Quantum Dot Structure

Semipolar ( 11̅01 ) InGaN/GaN red–amber–yellow light-emitting diodes on triangular-striped Si (100) substrate

Polarization Modification In Ingan/Gan Multiple Quantum Wells By Symmetrical Thin Low Temperature-Gan Layers

Effect Of An Indium-Doped Barrier On Enhanced Near-Ultraviolet Emission From Ingan/Algan: In Multiple Quantum Wells Grown On Si(111)

Monolithic semi-polar ($1ar{1}01$) InGaN/GaN near white light-emitting diodes on micro-striped Si (100) substrate

Improvement of Structural and Luminescence Properties in InGaN/GaN Multiple Quantum Wells by Symmetrical Thin Low Temperature-Gan Layers

Cubic GaN and InGaN/GaN quantum wells

The Influence of InGaN Interlayer on the Performance of InGaN/GaN Quantum-Well-Based LEDs at High Injections

Selective Area Epitaxy of Semipolar InGaN/GaN Multiple Quantum Wells on GaN Microfacets Using Crossover Stripe Patterns

Thermally Activated Carriers Transfer Process For The Success Of Ingan/Gan Multi-Quantum Well Light Emitting Devices

Ingan/Gan Multilayer Quantum Dots Yellow-Green Light-Emitting Diode with Optimized Gan Barriers

Monolithic semi-polar () InGaN/GaN near white light-emitting diodes on micro-striped Si (100) substrate*

Highly efficient optical transition between excited states in wide InGaN quantum wells

Effect of High Temperature and Interface Treatments on Photoluminescence from InGaN/GaN Multiple Quantum Wells with Green Light Emissions

Semipolar ($$ 1\bar{1}01 $$) InGaN/GaN red–amber–yellow light-emitting diodes on triangular-striped Si (100) substrate

Boosting Green GaInN/GaN Light-Emitting Diode Performance by a GaInN Underlying Layer