Abstract:<p>The 1-period, 2-period, 4-period and 6-period InGaN/GaN quantum wells were grown by metal organic chemical vapor deposition system. Atomic force microscopy measurements and Scanning transmission electron microscopy (STEM) high-angle annular dark field (HAADF) images were used to characterize the surface morphology and cross section structures. High-resolution Transmission Electron Microscope (HRTEM) images were shot to observe defects and non-radiative recombination centers. With increasing period number, the strain accumulated and relaxed gradually, leading to the formation of high density V-shaped pits (VPs). When the number of period increased to 4, the density of VPs was high enough to connect site by site, so that island-shaped morphology appeared between adjacent VPs. All islands can be divided into three categories according to size: large, medium and small islands. Under those large islands, the InGaN layers were cut off by the VPs generated at the bottom quantum well (QW), which also cut off the migration path of indium atoms and formed the vertically arranged indium-rich (In-rich) quantum dots (QDs). Under the medium and small islands, the InGaN layer was still continuous, but significant fluctuations of composition and thickness appeared due to strain relaxation, leading to the formation of In-rich QDs. The In-rich QDs formed in the two ways can enhance the carrier localization effect, which is conducive to the improvement of internal quantum efficiency. However, the strain also accumulated with increasing the number of periods, leading to a greater degree of strain relaxation and the formation of non-radiative recombination centers (stacking faults) in In-rich QDs, which reduced the internal quantum efficiency. By controlling strain reasonably, the internal quantum efficiency is expected to be further improved.</p>

Improved Semipolar Green InGaN/GaN Quantum Wells on Asymmetrically Grown (112̄2) GaN Templates and Their Correlations

Improved semipolar green InGaN/GaN quantum wells on asymmetrically grown (11(2)over-bar2) GaN templates and their correlations

Green-Amber Emission From High Indium Content Ingan Quantum Wells Improved By Interface Modification Of Semipolar (1122) Gan Templates

Selective Area Epitaxy of Semipolar InGaN/GaN Multiple Quantum Wells on GaN Microfacets Using Crossover Stripe Patterns

Improvement of Structural and Luminescence Properties in InGaN/GaN Multiple Quantum Wells by Symmetrical Thin Low Temperature-Gan Layers

In Situ Site-Specific Gallium Filling and Nanograin Growth for Blocking of Threading Defects in Semipolar (112̅2) GaN

Dislocation Reduction and Stress Relaxation of GaN and InGaN Multiple Quantum Wells with Improved Performance Via Serpentine Channel Patterned Mask.

In Situ Site-Speci fi c Gallium Filling and Nanograin Growth for Blocking of Threading Defects in Semipolar ( 11 2̅ 2 ) GaN

Improving the Internal Quantum Efficiency of Green Ingan Quantum Dots Through Coupled Ingan/Gan Quantum Well and Quantum Dot Structure

Nanostructure analysis of InGaN/GaN quantum wells based on semi-polar-faced GaN nanorods

Characterisation of Defects at Non-Polar GaN/InGaN Junctions in Novel Materials for Application in Light Emitting Diodes

Cubic GaN and InGaN/GaN quantum wells

The formation of island-shaped morphology on the surface of InGaN/GaN QWs and the enhancement of carrier localization effect caused by high-density V-shaped pits

High-indium-content InGaN Quantum-Well Structure Grown Pseudomorphically on a Strain-Relaxed InGaN Template Layer

Significantly improved surface morphology of N-polar GaN film grown on SiC substrate by the optimization of V/III ratio

Semi-polar (20–21) InGaN/GaN Multiple Quantum Wells Grown on Patterned Sapphire Substrate with Internal Quantum Efficiency Up to 52 Per Cent

Improved carrier transport and photoelectric properties of InGaN/GaN multiple quantum wells with wider well and narrower barrier

Epitaxy and Optical Properties of InGaN/GaN Multiple Quantum Wells on GaN Hexagonal Pyramids Template

Improved Optical Properties of Nonpolar AlGaN-Based Multiple Quantum Wells Emitting at 280 Nm

Impact of ITO Layer on the Spatial Optical Distribution of Semipolar (20-21) InGaN/GaN Multiple Quantum Wells with Surface Morphology.

Structural characterization of InGaN multi-quantum-wells grown on high indium content InGaN template with {1 0 1¯m} faceted surface