Abstract:We investigate the luminescence of Ga- and N-polar In$_{x}$Ga$_{1-x}$N/In$_{y}$Ga$_{1-y}$N quantum wells (QWs) grown by plasma-assisted molecular beam epitaxy on freestanding GaN as well as 6H-SiC substrates. In striking contrast to their Ga-polar counterparts, the N-polar QWs prepared on freestanding GaN do not exhibit any detectable photoluminescence. Theoretical simulations of the band profiles combined with resonant excitation of the QWs allow us to rule out carrier escape and subsequent surface recombination as the reason for the absence of luminescence. To explore the hypothesis of a high concentration of nonradiative defects at the interfaces between wells and barriers, we analyze Ga- and N-polar QWs prepared on 6H-SiC as a function of the well width. Intense luminescence is observed for both Ga- and N polar samples. As expected, the luminescence of the Ga-polar QWs quenches and red-shifts with increasing well width due to the quantum confined Stark effect. In contrast, both the intensity and the energy of the luminescence from the N-polar samples are essentially independent of well width. Transmission electron microscopy reveals that the N-polar QWs exhibit abrupt interfaces and homogeneous composition, excluding emission from In-rich clusters as the reason for this anomalous behavior. The microscopic origin of the luminescence in the N-polar QWs is elucidated using spatially resolved cathodoluminescence spectroscopy. Regardless of well width, the luminescence is found to not originate from the N-polar QWs, but from the semipolar facets of v-pit defects. These results cast serious doubts on the potential of N-polar QWs grown by plasma-assisted molecular beam epitaxy for the development of long-wavelength light emitting diodes. What remains to be seen is whether unconventional growth conditions may enable a significant reduction in the concentration of nonradiative defects.

Semi-polar (20–21) InGaN/GaN Multiple Quantum Wells Grown on Patterned Sapphire Substrate with Internal Quantum Efficiency Up to 52 Per Cent

Anisotropic structural and optical properties of semi-polar (20-21) InGaN/GaN multiple quantum wells grown on patterned sapphire substrates

V-shaped Semipolar InGaN/GaN Multi-Quantum-well Light-Emitting Diodes Directly Grown on C-Plane Patterned Sapphire Substrates

Green-Amber Emission From High Indium Content Ingan Quantum Wells Improved By Interface Modification Of Semipolar (1122) Gan Templates

Monolithic semi-polar ($1ar{1}01$) InGaN/GaN near white light-emitting diodes on micro-striped Si (100) substrate

Metal–Organic Vapor‐Phase Epitaxy of Semipolar InGaN Quantum Dots Based on GaN V‐Shaped Pits

Spatial Distribution of Optical Intensity of Overgrown Semi-Polar (20-21) InGaN/GaN Multiple Quantum Wells Dominated by Surface Morphology

Monolithic semi-polar () InGaN/GaN near white light-emitting diodes on micro-striped Si (100) substrate*

Realization of high efficiency AlGaN-based multiple quantum wells grown on nano-patterned sapphire substrates

Impact of ITO Layer on the Spatial Optical Distribution of Semipolar (20-21) InGaN/GaN Multiple Quantum Wells with Surface Morphology.

Photoluminescence Properties of Blue and Green Multiple InGaN/GaN Quantum Wells

Green-emitting cubic GaN/In0.16Ga0.84N/GaN quantum well with 32% internal quantum efficiency at room temperature

Improved Optical Properties of Nonpolar AlGaN-Based Multiple Quantum Wells Emitting at 280 Nm

Selective Area Epitaxy of Semipolar InGaN/GaN Multiple Quantum Wells on GaN Microfacets Using Crossover Stripe Patterns

Fabrication And Properties Of Coherent-Structure In-Polarity Inn/In0.7ga0.3n Multiquantum Wells Emitting At Around 1.55 Mu M

Positive Temperature Coefficient of Photovoltaic Efficiency in Solar Cells Based on InGaN/GaN MQWs

Optimization of Growth and Fabrication Techniques to Enhance the InGaN/GaN Multiple Quantum Well Solar Cells Performance

Effect Of An Indium-Doped Barrier On Enhanced Near-Ultraviolet Emission From Ingan/Algan: In Multiple Quantum Wells Grown On Si(111)

Comparison of the luminous efficiency of Ga- and N-polar In$_{x}$Ga$_{1-x}$N/In$_{y}$Ga$_{1-y}$N quantum wells grown by plasma-assisted molecular beam epitaxy

Unambiguously Enhanced Ultraviolet Luminescence of AlGaN Wavy Quantum Well Structures Grown on Large Misoriented Sapphire Substrate

Interface recombination in Ga- and N-polar GaN/(Al,Ga)N quantum wells grown by molecular beam epitaxy