Abstract:We investigate the luminescence of Ga- and N-polar In$_{x}$Ga$_{1-x}$N/In$_{y}$Ga$_{1-y}$N quantum wells (QWs) grown by plasma-assisted molecular beam epitaxy on freestanding GaN as well as 6H-SiC substrates. In striking contrast to their Ga-polar counterparts, the N-polar QWs prepared on freestanding GaN do not exhibit any detectable photoluminescence. Theoretical simulations of the band profiles combined with resonant excitation of the QWs allow us to rule out carrier escape and subsequent surface recombination as the reason for the absence of luminescence. To explore the hypothesis of a high concentration of nonradiative defects at the interfaces between wells and barriers, we analyze Ga- and N-polar QWs prepared on 6H-SiC as a function of the well width. Intense luminescence is observed for both Ga- and N polar samples. As expected, the luminescence of the Ga-polar QWs quenches and red-shifts with increasing well width due to the quantum confined Stark effect. In contrast, both the intensity and the energy of the luminescence from the N-polar samples are essentially independent of well width. Transmission electron microscopy reveals that the N-polar QWs exhibit abrupt interfaces and homogeneous composition, excluding emission from In-rich clusters as the reason for this anomalous behavior. The microscopic origin of the luminescence in the N-polar QWs is elucidated using spatially resolved cathodoluminescence spectroscopy. Regardless of well width, the luminescence is found to not originate from the N-polar QWs, but from the semipolar facets of v-pit defects. These results cast serious doubts on the potential of N-polar QWs grown by plasma-assisted molecular beam epitaxy for the development of long-wavelength light emitting diodes. What remains to be seen is whether unconventional growth conditions may enable a significant reduction in the concentration of nonradiative defects.

Comparison of the luminous efficiency of Ga- and N-polar In$_{x}$Ga$_{1-x}$N/In$_{y}$Ga$_{1-y}$N quantum wells grown by plasma-assisted molecular beam epitaxy

Interface recombination in Ga- and N-polar GaN/(Al,Ga)N quantum wells grown by molecular beam epitaxy

Luminescent N-polar (In,Ga)N/GaN quantum wells grown by plasma-assisted molecular beam epitaxy at high temperature

Characterisation of Defects at Non-Polar GaN/InGaN Junctions in Novel Materials for Application in Light Emitting Diodes

Fabrication And Properties Of Coherent-Structure In-Polarity Inn/In0.7ga0.3n Multiquantum Wells Emitting At Around 1.55 Mu M

Comparative analysis of selective area grown Ga- and N-polar InGaN/GaN nanowires for quantum emitters

Inhomogeneous broadening of optical transitions observed in photoluminescence and modulated reflectance of polar and non-polar InGaN quantum wells

Luminescence Properties of GaN/InxGa1−xN/InyGa1−yN Double Graded Structures (Zigzag Quantum Wells)

Impact of interfaces on photoluminescence efficiency of high indium content InGaN quantum wells

Improved Optical Properties of Nonpolar AlGaN-Based Multiple Quantum Wells Emitting at 280 Nm

Dynamics of carrier injection through V-defects in long wavelength GaN LEDs

Role of quantum-confined stark effect on bias dependent photoluminescence of N-polar GaN/InGaN multi-quantum disk amber light emitting diodes

Selectively Excited Photoluminescence of GaAs1−xNx Single Quantum Wells

Absence of quantum-confined Stark effect in GaN quantum disks embedded in (Al,Ga)N nanowires grown by molecular beam epitaxy

Monolithic semi-polar () InGaN/GaN near white light-emitting diodes on micro-striped Si (100) substrate*

Study of polarization properties of light emitted from a-plane InGaN/GaN quantum well-based light emitting diodes

Monolithic Semi-Polar ( 1 1 ¯ 01 ) InGaN/GaN Near White Light-Emitting Diodes on Micro-Striped Si (100) Substrate*

Strong potential profile fluctuations and effective localization process in InGaN∕GaN multiple quantum wells grown on {10‐1m} faceted surface GaN template

Optical Transitions In Ganas/Gaas Single Quantum Well

Steady-state recombination lifetimes in polar InGaN/GaN quantum wells by time-resolved photoluminescence

Quantum-confined stark effect in localized luminescent centers within InGaN/GaN quantum-well based light emitting diodes