Abstract:<p>The 1-period, 2-period, 4-period and 6-period InGaN/GaN quantum wells were grown by metal organic chemical vapor deposition system. Atomic force microscopy measurements and Scanning transmission electron microscopy (STEM) high-angle annular dark field (HAADF) images were used to characterize the surface morphology and cross section structures. High-resolution Transmission Electron Microscope (HRTEM) images were shot to observe defects and non-radiative recombination centers. With increasing period number, the strain accumulated and relaxed gradually, leading to the formation of high density V-shaped pits (VPs). When the number of period increased to 4, the density of VPs was high enough to connect site by site, so that island-shaped morphology appeared between adjacent VPs. All islands can be divided into three categories according to size: large, medium and small islands. Under those large islands, the InGaN layers were cut off by the VPs generated at the bottom quantum well (QW), which also cut off the migration path of indium atoms and formed the vertically arranged indium-rich (In-rich) quantum dots (QDs). Under the medium and small islands, the InGaN layer was still continuous, but significant fluctuations of composition and thickness appeared due to strain relaxation, leading to the formation of In-rich QDs. The In-rich QDs formed in the two ways can enhance the carrier localization effect, which is conducive to the improvement of internal quantum efficiency. However, the strain also accumulated with increasing the number of periods, leading to a greater degree of strain relaxation and the formation of non-radiative recombination centers (stacking faults) in In-rich QDs, which reduced the internal quantum efficiency. By controlling strain reasonably, the internal quantum efficiency is expected to be further improved.</p>

Metal–Organic Vapor‐Phase Epitaxy of Semipolar InGaN Quantum Dots Based on GaN V‐Shaped Pits

V-shaped Semipolar InGaN/GaN Multi-Quantum-well Light-Emitting Diodes Directly Grown on C-Plane Patterned Sapphire Substrates

Structural and optical properties of 3D growth multilayer InGaN/GaN quantum dots by metalorganic chemical vapor deposition

InGaN/GaN Multi-Quantum-Well and Light-Emitting Diode Based on V-pit-Shaped GaN Grown on Patterned Sapphire Substrate

Abnormal Stranski-Krastanov Mode Growth of Green InGaN Quantum Dots: Morphology, Optical Properties, and Applications in Light-Emitting Devices

Improved Quantum Efficiency In Semipolar (1(1)Over-Bar01) Ingan/Gan Quantum Wells Grown On Gan Prepared By Lateral Epitaxial Overgrowth

Investigation of Micromorphology and Carrier Recombination Dynamics for InGaN/GaN Multi-Quantum Dots Grown by Molecular Beam Epitaxy

Monolithic semi-polar ($1ar{1}01$) InGaN/GaN near white light-emitting diodes on micro-striped Si (100) substrate

Monolithic semi-polar () InGaN/GaN near white light-emitting diodes on micro-striped Si (100) substrate*

Near-IR emission of InGaN quasi-quantum dots on non-polar GaN nanowire structures

Semi-polar (20–21) InGaN/GaN Multiple Quantum Wells Grown on Patterned Sapphire Substrate with Internal Quantum Efficiency Up to 52 Per Cent

Photoluminescence Study of InGaN/GaN Quantum Dots Grown on Passivated GaN Surface

Carrier localization and phonon-assisted hopping effects in semipolar InGaN/GaN light-emitting dioses grown by selective area epitaxy

Droplet epitaxy of InGaN quantum dots on Si (111) by plasma-assisted molecular beam epitaxy

Metal-Organic-Vapor Phase Epitaxy of Ingan Quantum Dots and Their Applications in Light-Emitting Diodes

Metal Organic Vapor Phase Epitaxy of High-Indium-composition InGaN Quantum Dots Towards Red Micro-Leds

Explorations on Growth of Blue-Green-Yellow-Red InGaN Quantum Dots by Plasma-Assisted Molecular Beam Epitaxy.

InGaN Quantum Dots with Short Exciton Lifetimes Grown on Polar C-Plane by Metal-Organic Chemical Vapor Deposition

The formation of island-shaped morphology on the surface of InGaN/GaN QWs and the enhancement of carrier localization effect caused by high-density V-shaped pits

Long wavelength emitting GaInN quantum wells on metamorphic GaInN buffer layers with enlarged in-plane lattice parameter

Semipolar $(11\bar{2}2)$ and Polar (0001) InGaN Grown on Sapphire Substrate by Using Pulsed Metal Organic Chemical Vapor Deposition